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MPS3563RLRE

Onsemi

MPS3563RLRE by Onsemi

MPS3563RLRE by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at up to 150 °C, has a VCEO of 12V, and IC of 0.05A. Ideal for amplifier applications in the UHF band, it features a plastic/epoxy package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,127 parts In-Stock

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Digiode

USA . 983 parts In-Stock

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983

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TANS Electronics

Latvia . 6,030 parts In-Stock

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Problanco Electronics

Mexico . 5,388 parts In-Stock

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Kulean Microsystems

USA . 2,760 parts In-Stock

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Corphita

USA . 1,071 parts In-Stock

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SupplyDigital Components

Austria . 336 parts In-Stock

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Corohmni

South Africa . 133 parts In-Stock

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UHIMA Technologies

Türkiye . 96 parts In-Stock

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Overview

Enhance the performance of your amplifiers with the MPS3563RLRE from Onsemi. Known for their high-quality components, Onsemi delivers reliable RF Small Signal Bipolar Junction Transistors for a wide range of applications in the ultra-high frequency band. With a maximum operating temperature of 150 °C and a transition frequency of 600 MHz, this NPN transistor offers exceptional value and benefits to customers seeking superior amplification capabilities. Upgrade your electronics today with Onsemi's trusted components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and offer high performance, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor in circuits, making it easier to use and maintain.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers reliable and efficient amplification of signals.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

With a high frequency band capability, this transistor is suitable for applications that require processing of ultra high frequency signals.

Maximum Collector-Emitter Voltage: 12 V

The high maximum collector-emitter voltage allows for the handling of higher voltages, making this transistor versatile in different circuit designs.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05 A, this transistor can handle moderate current levels, suitable for various amplifier applications.

Nominal Transition Frequency (fT): 600 MHz

The high nominal transition frequency of 600 MHz indicates the speed at which this transistor can switch on and off, making it ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS3563RLRE attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS3563RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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