Loading...

2N3572

Texas Instruments

2N3572 by Texas Instruments

2N3572 by Texas Instruments is an NPN BJT transistor with a max fT of 1500 MHz. It has a max IC of 0.05 A and operates at up to 175°C. Ideal for amplifier applications in the UHF band, this transistor features a cylindrical package with isolated case connection.

Median Price

$10.250

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ace Electronics

USA . 8 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

-

10k+ parts

-

8

$10.000

-

-

-

Bristol Electronics

USA . 8 parts In-Stock

1+ parts

$10.500

100+ parts

-

1k+ parts

-

10k+ parts

-

8

$10.500

-

-

-

Digiode

USA . 5,913 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,913

-

-

-

-

Vyrian

USA . 5,558 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,558

-

-

-

-

Anansix

USA . 1,816 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,816

-

-

-

-

ECAB

Sweden . 62 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

62

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 49 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

49

-

-

-

-

LittleDiode

UK . 44 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

44

-

-

-

-

Manoshevitz Elec. Sales

Israel . 33 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33

-

-

-

-

Microfarads

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Pride Electronics

USA . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ChromeModa Solutions

Germany . 4,207 parts In-Stock

1+ parts

$0.433

100+ parts

$0.355

1k+ parts

-

10k+ parts

-

4,207

$0.433

$0.355

-

-

Northwest PG Solutions

USA . 2,546 parts In-Stock

1+ parts

$0.456

100+ parts

-

1k+ parts

-

10k+ parts

$0.402

2,546

$0.456

-

-

$0.402

IDEA Electronic Components Group

UK . 790 parts In-Stock

1+ parts

$0.915

100+ parts

-

1k+ parts

$0.824

10k+ parts

-

790

$0.915

-

$0.824

-

DigiPath Technology Company

USA . 2,919 parts In-Stock

1+ parts

$1.721

100+ parts

-

1k+ parts

-

10k+ parts

-

2,919

$1.721

-

-

-

MKK Technologies

India . 1,855 parts In-Stock

1+ parts

$1.721

100+ parts

-

1k+ parts

-

10k+ parts

-

1,855

$1.721

-

-

-

AZTECH Wire

Italy . 385 parts In-Stock

1+ parts

$8.773

100+ parts

-

1k+ parts

-

10k+ parts

-

385

$8.773

-

-

-

One Stop Electronics

USA . 166 parts In-Stock

1+ parts

$37.050

100+ parts

-

1k+ parts

-

10k+ parts

-

166

$37.050

-

-

-

Corphita

USA . 3,127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,127

-

-

-

-

Parana Technologies

USA . 1,619 parts In-Stock

1+ parts

-

100+ parts

$1.094

1k+ parts

-

10k+ parts

-

1,619

-

$1.094

-

-

Native Components

USA . 1,109 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,109

-

-

-

-

Assy Fe

Spain . 25 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25

-

-

-

-

Overview

Elevate your RF signal amplification with the 2N3572 by Texas Instruments, a top-tier manufacturer known for high-quality components. This NPN transistor, designed for ultra-high frequency bands, offers unparalleled performance and reliability in amplifier applications. With a maximum collector-emitter voltage of 13V and a nominal transition frequency of 1500 MHz, this transistor delivers exceptional power dissipation and efficiency. Upgrade your system today with the Texas Instruments 2N3572 and experience superior signal amplification like never before.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity, ensuring efficient heat dissipation and increased reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes due to their high input impedance and current gain.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to integrate into applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Package Shape: ROUND

Round package shape allows for easy mounting and secure placement in various electronic devices.

Terminal Form: WIRE

Wire terminals provide reliable connections and easy soldering, facilitating integration into circuit boards.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, making it ideal for use in advanced communication systems.

Maximum Power Dissipation (Abs): 0.2 W

With a high maximum power dissipation, this transistor can handle demanding tasks without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact form factor, saving space and allowing for easy integration into circuit designs.

Maximum Operating Temperature: 175 °C

Operates reliably at high temperatures, ensuring stability and performance even in demanding environments.

Maximum Collector-Base Capacitance: 0.85 pF

Low collector-base capacitance minimizes signal distortion and improves overall performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 13 V

Can handle voltages up to 13V, suitable for a wide range of applications requiring higher voltage levels.

Transistor Element Material: SILICON

Silicon transistor element offers high performance, reliability, and durability, ensuring long-lasting functionality.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, this transistor can handle moderate current loads in amplifier circuits.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and soldering, simplifying the integration process.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and ensures stable performance in diverse circuit configurations.

Nominal Transition Frequency (fT): 1500 MHz

High nominal transition frequency enables fast switching speeds and efficient signal processing, making it suitable for high-speed applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N3572 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

13 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3572 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-102-8173, 5961001028173, 5961-14-357-9165, 5961143579165

NIIN

001028173, 143579165

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 18