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SD1420

STMicroelectronics

SD1420 by STMicroelectronics

SD1420 by STMicroelectronics is an NPN BJT transistor with a max power dissipation of 8.75W, suitable for amplifier applications in the ultra-high frequency band. It has a min DC current gain of 20 (hFE), operates at temperatures up to 200 °C, and features a max collector-emitter voltage of 28V.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 4,549 parts In-Stock

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Vyrian

USA . 3,247 parts In-Stock

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Anansix

USA . 1,167 parts In-Stock

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Electronic Expediters

USA . 64 parts In-Stock

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IDEA Electronic Components Group

UK . 539 parts In-Stock

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$0.306

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$0.276

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539

$0.306

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$0.276

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MKK Technologies

India . 504 parts In-Stock

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$0.576

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504

$0.576

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DigiPath Technology Company

USA . 504 parts In-Stock

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$0.576

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504

$0.576

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Marpe Global Electronics

Taiwan . 3,187 parts In-Stock

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QualityLine Systems

Poland . 3,187 parts In-Stock

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XL Components Corporation

Australia . 3,187 parts In-Stock

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Corphita

USA . 432 parts In-Stock

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432

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Parana Technologies

USA . 365 parts In-Stock

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$0.366

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Overview

Elevate your RF amplifier performance with the SD1420 by STMicroelectronics. Crafted with precision and expertise, this NPN transistor offers unparalleled quality and reliability for a wide range of applications in the ultra-high frequency band. Experience seamless connectivity and enhanced signal amplification with this single configuration transistor. Trust in STMicroelectronics to deliver cutting-edge technology that exceeds expectations. Upgrade your projects today with the SD1420 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor in circuits, making it easier to work with.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: FLAT

The flat terminal form provides a stable connection and ease of soldering during installation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications requiring high-frequency performance, such as radio frequency systems.

No. of Terminals: 4

Having 4 terminals allows for versatile connectivity options in electronic circuits.

Maximum Power Dissipation (Abs): 8.75 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Package Style (Meter): POST/STUD MOUNT

The post/stud mount package style provides secure mounting options in electronic devices.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures reliable amplification performance in circuits.

Maximum Operating Temperature: 200 °C

Capable of operating at high temperatures up to 200 °C, suitable for demanding environments.

Maximum Collector-Base Capacitance: 5 pF

Low collector-base capacitance of 5pF minimizes signal distortion and ensures high-frequency operation.

Maximum Collector-Emitter Voltage: 28 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels in circuits.

Transistor Element Material: SILICON

Silicon-based transistor element material provides high performance and reliability for various applications.

Maximum Collector Current (IC): 0.25 A

Capable of handling a maximum collector current of 0.25A, suitable for medium-power amplification applications.

Terminal Position: RADIAL

Radial terminal position allows for easy connectivity and integration into electronic circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SD1420 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

28 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

SD1420 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

4730-14-210-9761, 4730142109761

NIIN

142109761

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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