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SS9018

Onsemi

SS9018 by Onsemi

SS9018 by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.5V and hFE of 28, ideal for amplifier applications in the very high frequency band up to 1100MHz. With a max IC of 0.05A and Pdiss of 0.4W, it operates at temperatures up to 150 °C in a cylindrical package with through-hole terminals.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,769 parts In-Stock

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Vyrian

USA . 1,900 parts In-Stock

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1,900

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Problanco Electronics

Mexico . 7,427 parts In-Stock

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Kulean Microsystems

USA . 6,243 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Corphita

USA . 2,460 parts In-Stock

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TANS Electronics

Latvia . 2,000 parts In-Stock

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Supply Digital

USA . 1,207 parts In-Stock

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UHIMA Technologies

Türkiye . 706 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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SupplyDigital Components

Austria . 270 parts In-Stock

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Overview

Elevate your RF signal amplification with the SS9018 from Onsemi. Designed with precision and expertise, this NPN transistor offers unparalleled performance in the very high-frequency band, making it ideal for a wide range of amplifier applications. With a maximum VCEsat of only 0.5V and a minimum DC current gain of 28, this transistor delivers superior efficiency and reliability. Trust Onsemi's legacy of excellence and innovation to bring you cutting-edge technology that meets your needs. Experience the difference with the SS9018 and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration into circuits and provides compatibility with other NPN devices.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures easy implementation.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing high performance in signal amplification.

Maximum VCEsat: 0.5 V

Low VCEsat value ensures minimal voltage drop across the collector-emitter junction, leading to efficient operation.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for very high-frequency applications, ensuring reliable performance in demanding conditions.

No. of Terminals: 3

Having 3 terminals allows for versatile connectivity options in circuits.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4W, the transistor can handle high power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact form factor and ease of handling during installation.

Maximum Power Dissipation Ambient: 0.4 W

The maximum power dissipation in ambient conditions of 0.4W ensures stable operation even in high-temperature environments.

Minimum DC Current Gain (hFE): 28

The minimum DC current gain of 28 ensures reliable amplification of input signals with minimal loss.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand high-temperature environments.

Maximum Collector-Base Capacitance: 1.7 pF

Low collector-base capacitance of 1.7pF minimizes signal distortion and ensures high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

The maximum collector-emitter voltage of 15V provides a wide range of voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistor element material offers high reliability and performance in various operating conditions.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, the transistor can handle moderate current levels with ease.

Terminal Position: BOTTOM

Bottom terminal position allows for convenient PCB mounting and soldering.

Nominal Transition Frequency (fT): 1100 MHz

High nominal transition frequency of 1100MHz enables high-speed signal processing and amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SS9018 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

28

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

SS9018 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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