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SS9018HBU

Onsemi

SS9018HBU by Onsemi

SS9018HBU by Onsemi is a NPN RF Small Signal Bipolar Junction Transistor (BJT) with a max operating temperature of 150 °C. It has a min DC current gain (hFE) of 97 and a nominal transition frequency (fT) of 1100 MHz. This transistor is commonly used in amplifier applications.

Median Price

$0.029

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 359,815 parts In-Stock

1+ parts

-

100+ parts

$0.029

1k+ parts

$0.024

10k+ parts

$0.021

359,815

-

$0.029

$0.024

$0.021

DigiKey

USA . 140,896 parts In-Stock

1+ parts

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140,896

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Flip Electronics (Authorized)

USA . 140,896 parts In-Stock

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140,896

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Digiode

USA . 1,007 parts In-Stock

1+ parts

$0.024

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-

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1,007

$0.024

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.026

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500

$0.026

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Vyrian

USA . 250,063 parts In-Stock

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250,063

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Flip Electronics

USA . 140,896 parts In-Stock

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140,896

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DigiKey Marketplace

USA . 140,896 parts In-Stock

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140,896

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Chip Stock

USA . 59,000 parts In-Stock

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59,000

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North Shore Components

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 250,101 parts In-Stock

1+ parts

$0.021

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$0.020

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$0.020

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250,101

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$0.020

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Ampacity Inc.

Singapore . 249,938 parts In-Stock

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$0.021

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249,938

$0.021

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Corphita

USA . 1,904 parts In-Stock

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$0.022

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$0.022

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Corohmni

South Africa . 338 parts In-Stock

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$0.025

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338

$0.025

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Argo Parts USA

USA . 634 parts In-Stock

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$0.026

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634

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Component Stockers USA

USA . 556,537 parts In-Stock

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$0.030

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$0.020

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$0.020

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$0.020

556,537

$0.030

$0.020

$0.020

$0.020

Andel Nordic

Denmark . 2,938 parts In-Stock

1+ parts

$1.140

100+ parts

-

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$1.095

10k+ parts

$1.095

2,938

$1.140

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$1.095

$1.095

Continental Prestige Electronics

USA . 384,515 parts In-Stock

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$0.019

384,515

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Perfect Parts

USA . 57,594 parts In-Stock

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TANS Electronics

Latvia . 6,631 parts In-Stock

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Kulean Microsystems

USA . 6,468 parts In-Stock

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Problanco Electronics

Mexico . 6,050 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 2,859 parts In-Stock

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2,859

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SupplyDigital Components

Austria . 862 parts In-Stock

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UHIMA Technologies

Türkiye . 737 parts In-Stock

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Overview

Experience the power of the SS9018HBU by Onsemi, a high-quality RF Small Signal Bipolar Junction Transistor. With its NPN polarity, single configuration, and very high-frequency band, this transistor proves to be an excellent choice for amplification applications. Manufactured by Onsemi, a trusted name in the industry, you can expect nothing less than exceptional performance and reliability. The SS9018HBU offers a maximum collector-emitter voltage of 15V, a minimum DC current gain of 97, and a nominal transition frequency of 1100 MHz. Whether you're designing audio equipment or communication devices, this transistor is sure to deliver outstanding results. Unlock your project's true potential with the SS9018HBU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product ideal for such applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in a variety of applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for high-frequency applications, making it ideal for use in RF circuits and communication systems.

Maximum Power Dissipation (Abs): 0.4 W

With a high maximum power dissipation, this transistor can handle relatively high power levels without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, ensuring reliability and stability in a variety of operating conditions.

Terminal Finish: Tin (Sn)

Tin finish provides good solderability and conductivity for easy installation and reliable connections.

Nominal Transition Frequency (fT): 1100 MHz

With a high transition frequency, this transistor is capable of high-speed switching and amplification in RF circuits.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SS9018HBU attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

97

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SS9018HBU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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