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2N4260

Texas Instruments

2N4260 by Texas Instruments

2N4260 by Texas Instruments is a PNP BJT for RF applications. With hFE of 30, it operates at 200°C with VCE of 15V and IC of 0.03A. Ideal for amplifiers in the UHF band, it has a fT of 1.6MHz and Pd max of 0.2W in a cylindrical package with isolated case connection.

Median Price

$3.875

Lifecycle Status

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15

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1k+

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TEDSS.com

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Ace Electronics

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Vyrian

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Prism Electronics

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Mil-Aero Solutions, Inc.

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Bristol Electronics

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Parana Technologies

USA . 961 parts In-Stock

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$0.459

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$1.610

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DigiPath Technology Company

USA . 798 parts In-Stock

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$0.506

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$0.465

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ChromeModa Solutions

Germany . 5,936 parts In-Stock

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IDEA Electronic Components Group

UK . 32 parts In-Stock

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Native Components

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Corohmni

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AZTECH Wire

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One Stop Electronics

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Problanco Electronics

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Glotronic Ltd.

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Kulean Microsystems

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Overview

Are you looking for a high-quality RF Small Signal Bipolar Junction Transistor? Look no further than the 2N4260 by Texas Instruments. With its PNP polarity, single configuration, and ultra-high frequency band, this transistor is perfect for amplifier applications. The cylindrical package body material ensures durability and reliability. Trust Texas Instruments' reputation for excellence in semiconductor manufacturing. Experience the value and benefits of the 2N4260, delivering superior performance and efficiency for your electronic projects.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal package provides better thermal conductivity and allows for efficient heat dissipation, making this transistor suitable for high power applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with existing PNP transistors in circuits, providing flexibility in design and compatibility.

Configuration: SINGLE

The single configuration simplifies the circuit design and is ideal for applications where only one transistor is needed.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high gain and low noise characteristics, making it a reliable choice for signal amplification.

No. of Terminals: 4

Having 4 terminals allows for versatile connections and flexibility in circuit design, accommodating different requirements and configurations.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle higher power levels without overheating, ensuring durability and reliability.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compact size and easy mounting, making it suitable for space-constrained applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can withstand high temperatures, making it suitable for demanding environments and industrial applications.

Maximum Collector-Base Capacitance: 2.5 pF

The low collector-base capacitance of 2.5 pF ensures minimal signal distortion and high frequency response, making it ideal for high-frequency applications.

Maximum Collector-Emitter Voltage: 15 V

The maximum collector-emitter voltage of 15 V provides a safety margin and prevents breakdown under high voltage conditions, ensuring reliability in operation.

Nominal Transition Frequency (fT): 1.6 MHz

With a nominal transition frequency of 1.6 MHz, this transistor offers high-speed performance, making it suitable for applications requiring fast switching and high frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N4260 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

30

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4260 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-241-3420, 5961002413420, 5961-01-339-6772, 5961013396772, 5961-99-658-5720, 5961996585720, 5961-99-660-0351, 5961996600351

NIIN

002413420, 013396772, 996585720, 996600351

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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