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2N4260

Onsemi

2N4260 by Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .03 A; Qualification: Not Qualified; JEDEC-95 Code: TO-18;

Median Price

$3.875

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (In-Stock)

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TEDSS.com

USA . 16 parts In-Stock

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$2.750

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Ace Electronics

USA . 5 parts In-Stock

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Vyrian

USA . 4,539 parts In-Stock

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Digiode

USA . 4,130 parts In-Stock

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ES Components

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Electronic Expediters

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PUI

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MISTER SPROCKETS

USA . 38 parts In-Stock

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Prism Electronics

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ACDS - Activité Composants Distribution Service

France . 28 parts In-Stock

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Holdelec - ElecDif-Pro

France . 28 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 24 parts In-Stock

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Bristol Electronics

USA . 24 parts In-Stock

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Resion

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Electronics Depot

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Distributors (Availability)

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Parana Technologies

USA . 961 parts In-Stock

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$0.459

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$1.610

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961

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DigiPath Technology Company

USA . 798 parts In-Stock

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$0.506

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$0.465

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ChromeModa Solutions

Germany . 5,936 parts In-Stock

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$0.516

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$0.423

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IDEA Electronic Components Group

UK . 32 parts In-Stock

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Native Components

USA . 583 parts In-Stock

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$1.066

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Corohmni

South Africa . 83 parts In-Stock

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AZTECH Wire

Italy . 841 parts In-Stock

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One Stop Electronics

USA . 903 parts In-Stock

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$16.050

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TANS Electronics

Latvia . 7,688 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 4,747 parts In-Stock

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Supply Digital

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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SupplyDigital Components

Austria . 1,192 parts In-Stock

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Northwest PG Solutions

USA . 722 parts In-Stock

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Kulean Microsystems

USA . 326 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 75 parts In-Stock

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Assy Fe

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Kepictronics

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UHIMA Technologies

Türkiye . 32 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N4260 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

JEDEC-95 Code:

TO-18

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4260 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-241-3420, 5961002413420, 5961-01-339-6772, 5961013396772, 5961-99-658-5720, 5961996585720, 5961-99-660-0351, 5961996600351

NIIN

002413420, 013396772, 996585720, 996600351

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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