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MPSH17RLRP

Onsemi

MPSH17RLRP by Onsemi

MPSH17RLRP by Onsemi is a NPN RF BJT transistor with 3 terminals. It operates in the very high frequency band up to 800 MHz, making it suitable for amplifier applications. With a max collector-emitter voltage of 15V and low capacitance of 0.9 pF, it is ideal for high-frequency circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,184 parts In-Stock

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Digiode

USA . 1,164 parts In-Stock

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Problanco Electronics

Mexico . 8,023 parts In-Stock

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TANS Electronics

Latvia . 6,521 parts In-Stock

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SupplyDigital Components

Austria . 6,421 parts In-Stock

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Kulean Microsystems

USA . 2,976 parts In-Stock

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Corphita

USA . 1,370 parts In-Stock

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UHIMA Technologies

Türkiye . 498 parts In-Stock

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Corohmni

South Africa . 319 parts In-Stock

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Overview

Elevate your RF signal amplification with the Onsemi MPSH17RLRP, a top-quality NPN bipolar junction transistor designed for very high frequency band applications. Manufactured by industry leader Onsemi, this transistor offers exceptional performance and reliability in a single configuration package. Whether you're working on amplifier projects or other RF applications, this transistor provides unmatched value, benefits, and advantages to meet your needs. Upgrade your electronics with the MPSH17RLRP and experience superior quality and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors offer high current amplification and are commonly used in most electronic circuits.

Configuration: SINGLE

Simplifies circuit design and reduces the number of components needed.

Transistor Application: AMPLIFIER

Designed specifically for amplifying signals, making it ideal for audio or radio frequency applications.

Package Shape: ROUND

The round shape allows for easy mounting and installation in various devices.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto PCBs and provides a strong mechanical connection.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of handling high-frequency signals, suitable for applications requiring fast switching speeds.

No. of Terminals: 3

Provides necessary connections for proper operation in a circuit.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for efficient heat dissipation, improving overall performance.

Maximum Operating Temperature: 150 °C

Can operate reliably even in high-temperature environments, ensuring stability during operation.

Maximum Collector-Base Capacitance: 0.9 pF

Low capacitance helps prevent signal distortion and ensures accurate amplification.

Maximum Collector-Emitter Voltage: 15 V

Can withstand high voltage levels, providing protection against potential voltage surges.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability compared to other materials.

Terminal Finish: TIN LEAD

Provides a stable and reliable connection for the terminals, ensuring proper functionality.

Terminal Position: BOTTOM

Bottom terminal position allows for easy installation and connection in circuits.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency enables fast signal processing and amplification, suitable for high-speed applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH17RLRP attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.9 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH17RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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