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MPSH10ZL1

Onsemi

MPSH10ZL1 by Onsemi

MPSH10ZL1 by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 25V and transition frequency of 650MHz. Ideal for ultra-high frequency applications due to its low capacitance and high-frequency band capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,449 parts In-Stock

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Digiode

USA . 511 parts In-Stock

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511

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SupplyDigital Components

Austria . 8,063 parts In-Stock

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Problanco Electronics

Mexico . 4,847 parts In-Stock

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Kulean Microsystems

USA . 3,812 parts In-Stock

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Corphita

USA . 1,057 parts In-Stock

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Corohmni

South Africa . 497 parts In-Stock

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UHIMA Technologies

Türkiye . 251 parts In-Stock

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TANS Electronics

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Overview

Enhance your RF signal performance with the Onsemi MPSH10ZL1, a top-notch NPN transistor designed for ultra high-frequency applications. Manufactured by Onsemi, a trusted leader in semiconductor solutions, this transistor guarantees quality and reliability. Ideal for amplification and switching tasks, this product offers unmatched value and benefits to customers looking for superior performance and efficiency. Upgrade your electronics with the MPSH10ZL1 and experience the difference that Onsemi's cutting-edge technology can bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

Common and widely used type of BJT, making it compatible with many electronic circuits.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in electronic systems.

Package Shape: ROUND

Helps in easy mounting and fitting, allowing for neat and compact assembly in devices.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection, enhancing the usability and reliability of the transistor.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, ensuring efficient performance in demanding electronic systems.

No. of Terminals: 3

Provides necessary connections for proper operation and integration in circuits.

Package Style (Meter): CYLINDRICAL

Offers a compact and space-saving design, making it versatile for different electronic projects.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for reliable operation in various environmental conditions.

Maximum Collector-Base Capacitance: 0.7 pF

Low capacitance enables faster switching and better performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 25 V

Suitable voltage rating for a wide range of operating conditions, ensuring safety and reliability.

Transistor Element Material: SILICON

Silicon is a widely used material for transistors due to its reliability and efficiency in electronic circuits.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for secure connections in electronic assemblies.

Terminal Position: BOTTOM

Facilitates easy mounting and connection to PCBs, enhancing the ease of use and integration.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency enables fast switching and high-frequency operation, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH10ZL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH10ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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