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MMBTH17LT1

Onsemi

MMBTH17LT1 by Onsemi

MMBTH17LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for ultra-high frequency band applications like amplifiers, featuring a small outline package with gull wing terminals. The transistor's silicon element material ensures high performance in RF signal amplification.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,907 parts In-Stock

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Digiode

USA . 967 parts In-Stock

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SupplyDigital Components

Austria . 4,770 parts In-Stock

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Kulean Microsystems

USA . 3,585 parts In-Stock

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TANS Electronics

Latvia . 1,630 parts In-Stock

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Corphita

USA . 1,128 parts In-Stock

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Problanco Electronics

Mexico . 732 parts In-Stock

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UHIMA Technologies

Türkiye . 630 parts In-Stock

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Corohmni

South Africa . 279 parts In-Stock

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Overview

Unlock the power of ultra-high frequency band applications with the MMBTH17LT1 by Onsemi. Designed with precision and quality in mind, this RF small signal bipolar junction transistor offers unparalleled performance in amplifier configurations. With a compact rectangular package body made of durable plastic/epoxy, this NPN transistor is perfect for surface mount installations. Trust in Onsemi's reputation for excellence and reliability to bring you the best value and benefits in the industry. Elevate your projects to new heights with the MMBTH17LT1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, making it suitable for portable and long-term applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN transistors and components in circuits, providing versatility and compatibility.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making it easier to use and reducing the chances of errors during assembly.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

Being surface mountable allows for easy and efficient mounting on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier placement and orientation on the PCB, improving overall design aesthetics and functionality.

Terminal Form: GULL WING

Gull wing terminal form allows for easy soldering and mounting on the PCB, ensuring secure connections and reliable performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high-frequency applications, offering high-speed performance and efficient signal processing in demanding environments.

No. of Terminals: 3

With 3 terminals, this transistor offers the necessary connectivity options for typical amplifier circuits, ensuring compatibility and ease of use.

Package Style: SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices and tight layouts.

Maximum Collector-Base Capacitance: 0.9 pF

The low maximum collector-base capacitance minimizes signal distortion and interference, ensuring clear and accurate signal amplification.

Maximum Collector-Emitter Voltage: 15 V

With a maximum collector-emitter voltage of 15V, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistor element material offers high durability and reliability, ensuring long-term performance and stability in various operating conditions.

Terminal Position: DUAL

Dual terminal position allows for flexible and versatile wiring configurations, accommodating different circuit layouts and connection requirements.

Nominal Transition Frequency (fT): 800 MHz

The high nominal transition frequency of 800 MHz indicates fast response and high-speed signal processing capabilities, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBTH17LT1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.9 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTH17LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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