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MMBTH11

Onsemi

MMBTH11 by Onsemi

MMBTH11 by Onsemi is a NPN BJT transistor for RF applications. It operates in the very high frequency band with a max fT of 650 MHz. With a collector-emitter voltage of 25V and max power dissipation of 0.35W, it is ideal for amplifier circuits in small outline packages.

Median Price

$0.041

Lifecycle Status

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17

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1k+

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Arrow

USA . 16 parts In-Stock

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$0.181

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Flip Electronics (Authorized)

USA . 83,251 parts In-Stock

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Verical

USA . 15,000 parts In-Stock

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$0.041

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Rochester

USA . 8,680 parts In-Stock

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$0.036

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$0.029

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$0.026

8,680

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$0.036

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$0.026

DigiKey

USA . 8,680 parts In-Stock

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$0.040

8,680

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$0.040

Chip1Stop

Japan . 557 parts In-Stock

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$0.044

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Nova Conductors

Japan . 700 parts In-Stock

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$0.031

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Digiode

USA . 2,812 parts In-Stock

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Flip Electronics

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DigiKey Marketplace

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Chip Stock

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Vyrian

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Quantum Digital Technology

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ACDS - Activité Composants Distribution Service

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Dan-Mar Components

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Distributors (Availability)

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Ampacity Inc.

Singapore . 39,300 parts In-Stock

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$0.028

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Semicontronic

India . 39,207 parts In-Stock

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Corphita

USA . 1,399 parts In-Stock

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Corohmni

South Africa . 88 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Argo Parts USA

USA . 2,237 parts In-Stock

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Continental Prestige Electronics

USA . 53,900 parts In-Stock

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 751 parts In-Stock

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Supply Digital

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Overview

Discover the MMBTH11 by Onsemi, a top-quality RF Small Signal BJT that offers exceptional performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, this NPN transistor is perfect for amplifier applications in the very high frequency band. Its compact size and surface mount capability make it versatile for various projects. Experience the value and benefits of the MMBTH11, from its efficient power dissipation to its impressive transition frequency. Trust Onsemi to deliver cutting-edge technology for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body material makes this transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

The NPN polarity ensures efficient amplification of signals in various electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in a variety of applications.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this transistor provides excellent signal amplification capabilities.

Surface Mount: YES

Being surface mountable, this transistor is easy to install on circuit boards, saving space and improving overall assembly efficiency.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on a circuit board, maximizing use of available space.

Terminal Form: GULL WING

The gull wing terminal form provides a secure and reliable connection in surface mount applications.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

With a very high frequency band, this transistor is ideal for applications requiring high-speed signal processing.

No. of Terminals: 3

The 3 terminals provide easy connectivity to external circuitry, enhancing overall versatility and functionality.

Maximum Power Dissipation (Abs): 0.35 W

The high power dissipation capability ensures reliable performance even in demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for compact electronic designs.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without performance degradation.

Maximum Collector-Base Capacitance: 0.7 pF

The low collector-base capacitance minimizes signal distortion and improves overall signal integrity.

Maximum Collector-Emitter Voltage: 25 V

The high collector-emitter voltage rating allows for safe operation in high voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures reliable performance and long-term stability.

Maximum Collector Current (IC): 0.05 A

The high collector current rating allows for efficient signal amplification even in high current applications.

Terminal Finish: Tin (Sn)

The tin terminal finish provides a durable and reliable connection, ensuring long-term performance.

Terminal Position: DUAL

The dual terminal position enhances stability and improves connectivity in surface mount applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a fast reflow time of 30 seconds, this transistor is easy and quick to install during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures reliable soldering and assembly in various production environments.

Nominal Transition Frequency (fT): 650 MHz

With a high nominal transition frequency, this transistor is well-suited for applications requiring high-speed signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBTH11 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTH11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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