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AT-41511-TR1G

Broadcom

AT-41511-TR1G by Broadcom

AT-41511-TR1G by Broadcom is an NPN RF BJT transistor with a max fT of 10GHz. It is designed for amplifier applications in the C band, featuring a collector-emitter voltage of 12V and a max power dissipation of 0.225W. This surface-mount transistor has a small outline package with Gull Wing terminals, making it suitable for high-frequency circuit designs.

Median Price

$0.278

Lifecycle Status

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6

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1k+

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.278

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Chip Stock

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ComSIT Distribution GmbH

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Vyrian

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Digiode

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Cyclops Electronics Ltd

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Aranea Global

USA . 1,000 parts In-Stock

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$0.272

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$0.262

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Component Stockers USA

USA . 7,001 parts In-Stock

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$1.370

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$1.300

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$1.260

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$1.370

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Decca Corp

Germany . 1,466 parts In-Stock

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$13.000

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$12.740

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$12.613

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AZTECH Wire

Italy . 790 parts In-Stock

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Perfect Parts

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RC Electronics

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Kepictronics

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Microchip USA

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Lixinc

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Alle Elektronik GmbH

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Glotronic Ltd.

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Continental Prestige Electronics

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Argo Parts USA

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GreenTree Electronics

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Supply Digital

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Corphita

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Overview

Unlock the power of high-quality RF Small Signal Bipolar Junction Transistors with the AT-41511-TR1G by Broadcom. Manufactured to the highest standards, this NPN transistor offers unparalleled performance in amplifier applications within the C Band frequency range. With a durable plastic/epoxy body and Gull Wing terminals, this transistor delivers reliability and efficiency. Trust Broadcom for cutting-edge technology that meets your needs. Experience the difference with the AT-41511-TR1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor, easy to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Can be easily mounted on circuit boards, saving space and allowing for efficient assembly.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and orientation during assembly.

Terminal Form: GULL WING

Gull wing terminals are reliable and provide good solder joint strength, ensuring stable connections.

Highest Frequency Band: C BAND

Operates effectively in the C band frequency range, suitable for high-frequency applications.

No. of Terminals: 4

Simple 4-terminal design, easy to understand and connect within a circuit.

Maximum Power Dissipation (Abs): 0.225 W

Can handle a maximum power dissipation of 0.225 W, ensuring reliable performance under specified conditions.

Package Style (Meter): SMALL OUTLINE

Compact small outline package, suitable for space-constrained applications.

Maximum Operating Temperature: 150 °C

Operates efficiently at up to 150°C, allowing for reliable performance in high-temperature environments.

Maximum Collector-Emitter Voltage: 12 V

Withstands a maximum collector-emitter voltage of 12 V, making it suitable for low-voltage applications.

Transistor Element Material: SILICON

Silicon-based transistor element offers high reliability and performance in various operating conditions.

Maximum Collector Current (IC): 0.05 A

Handles a maximum collector current of 0.05 A, suitable for low-power applications.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good solderability and electrical conductivity.

Terminal Position: DUAL

Dual terminal positioning allows for easy connection and integration within circuits.

Case Connection: COLLECTOR

Collector case connection design for efficient heat dissipation and reliability in operation.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperatures of up to 260°C during assembly processes.

Nominal Transition Frequency (fT): 10000 MHz

High nominal transition frequency of 10000 MHz enables fast switching and amplification capabilities.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) AT-41511-TR1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Broadcom

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

AT-41511-TR1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Broadcom

Broadcom Inc, a Delaware corporation headquartered in San Jose, CA, is a global technology leader that designs, develops and supplies a broad range of semiconductor and infrastructure software solutions. Broadcom’s category-leading product portfolio serves critical markets including data center, networking, software, broadband, wireless, storage and industrial. Our solutions include data center networking and storage, enterprise and mainframe software focused on automation, monitoring and security, smartphone components, telecoms and factory automation.

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