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BFR96

NXP Semiconductors

BFR96 by NXP Semiconductors

NXP Semiconductors' BFR96 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max VCE of 15V and IC of 0.075A, ideal for ultra-high frequency amplifier applications. The package is round, surface mountable, with 3 terminals in a disk button style.

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Nova Conductors

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ECAB

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Sogenti Electronics

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Fibra_Brandt Electronic GMBH

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NAC Semi

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Modulus Dynamics

Lithuania . 14,752 parts In-Stock

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Overview

Upgrade your RF amplifier designs with the BFR96 by NXP Semiconductors, a high-quality RF Small Signal BJT transistor that delivers outstanding performance in the ultra-high frequency band. Manufactured by a trusted industry leader, this NPN transistor offers reliability and precision for your amplifier applications. With its advanced design and superior capabilities, the BFR96 provides unmatched value and benefits to customers looking to enhance their RF circuits. Experience the difference with NXP Semiconductors and take your projects to the next level with the BFR96.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this product ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes integration easier in electronic circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy assembly and integration into modern electronic devices.

Package Shape: ROUND

Round package shape provides stability and ease of handling during installation.

Terminal Form: FLAT

Flat terminal form facilitates secure connections during circuit assembly.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for ultra-high frequency applications, ideal for high-speed communication systems.

No. of Terminals: 3

Three terminals provide necessary connections for power, input, and output signals in the circuit.

Package Style (Meter): DISK BUTTON

Disk button style offers compactness and space-saving design for efficient circuit layout.

Maximum Collector-Base Capacitance: 1.4 pF

Low collector-base capacitance ensures minimal signal distortion and high-frequency performance.

Maximum Collector-Emitter Voltage: 15 V

With a maximum collector-emitter voltage of 15 V, the transistor can handle high voltage applications safely.

Transistor Element Material: SILICON

Silicon material ensures reliability, efficiency, and high performance in electronic circuits.

Maximum Collector Current (IC): 0.075 A

Suitable for low-power applications where a maximum collector current of 0.075 A is sufficient.

Terminal Position: RADIAL

Radial terminal position allows for easy and secure mounting on circuit boards.

Reference Standard: CECC

Compliance with CECC standards ensures quality and reliability in performance.

Nominal Transition Frequency (fT): 5000 MHz

High nominal transition frequency of 5000 MHz enables high-speed signal processing and amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR96 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.4 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PRDB-F3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

DISK BUTTON

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Reference Standard:

CECC

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR96 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-465-5116, 5961014655116, 5961-01-081-0420, 5961010810420, 5961-99-967-7694, 5961999677694, 5961-14-366-3812, 5961143663812

NIIN

014655116, 010810420, 999677694, 143663812

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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