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BFR92AW,115

NXP Semiconductors

BFR92AW,115 by NXP Semiconductors

NXP Semiconductors' BFR92AW,115 is an NPN RF BJT with a max fT of 5000 MHz. It has a max power dissipation of 0.3 W and operates in the ultra-high frequency band. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.148

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Nova Conductors

Japan . 50 parts In-Stock

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VNN

France . 20,149 parts In-Stock

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Vyrian

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Anansix

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Digiode

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Inventory MP

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Bristol Electronics

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Sensible Micro Corp

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ComSIT Distribution GmbH

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Corohmni

South Africa . 240 parts In-Stock

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Continental Prestige Electronics

USA . 5,975 parts In-Stock

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Argo Parts USA

USA . 2,507 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 59 parts In-Stock

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AZTECH Wire

Italy . 704 parts In-Stock

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Semicontronic

India . 1,025 parts In-Stock

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One Stop Electronics

USA . 1,614 parts In-Stock

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Ampacity Inc.

Singapore . 555 parts In-Stock

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UNI Independent Distributors

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Corphita

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Formix International (Excess)

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Microchip USA

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Overview

Unleash the power of innovation with NXP Semiconductors' BFR92AW,115 RF Small Signal Bipolar Junction Transistor. Designed for ultra-high frequency applications, this NPN transistor offers unparalleled performance and reliability. Whether you're amplifying signals or enhancing your electronic projects, the BFR92AW,115 delivers exceptional value and quality. Elevate your designs with this cutting-edge component and experience the difference that NXP Semiconductors can make in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, perfect for high-frequency applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification, making this product suitable for amplifier circuits.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, making this product user-friendly.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is ideal for boosting weak signals.

Surface Mount: YES

With surface mount capability, this transistor is easy to mount onto circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to place and secure the transistor within a circuit layout.

Terminal Form: GULL WING

Gull wing terminals provide a strong connection and are ideal for surface mounting applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high-frequency band, this transistor is suitable for high-speed applications.

No. of Elements: 1

With a single element, this transistor is simple and straightforward to use in circuit designs.

No. of Terminals: 3

Three terminals allow for easy connections within a circuit, making this transistor versatile and adaptable.

Maximum Power Dissipation (Abs): 0.3 W

The high power dissipation capability ensures reliability and long-term performance in demanding conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making it a practical choice for compact designs.

Maximum Power Dissipation Ambient: 0.3 W

This transistor can handle high power dissipation in various ambient conditions, ensuring stable performance.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides consistent amplification for different input signals.

Maximum Operating Temperature: 150 °C

Capable of operating at temperatures up to 150°C, this transistor is suitable for high-temperature environments.

Maximum Collector-Emitter Voltage: 15 V

With a maximum voltage rating of 15V, this transistor can handle high voltage levels in circuits without risk of damage.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance and reliability, ensuring consistent operation over time.

Maximum Collector Current (IC): 0.025 A

Capable of handling a maximum collector current of 0.025A, this transistor is suitable for low-power applications.

Terminal Finish: TIN

Tin terminal finish provides a reliable and durable connection, ensuring stable performance in various conditions.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in circuit designs and allows for various connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Capable of withstanding peak reflow temperatures for up to 30 seconds, this transistor is suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 5000 MHz

With a nominal transition frequency of 5000 MHz, this transistor is ideal for high-frequency signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR92AW,115 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR92AW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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