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MMBTH10LT3

Onsemi

MMBTH10LT3 by Onsemi

MMBTH10LT3 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for UHF applications, it comes in a small outline package with Gull Wing terminals, making it suitable for high-frequency circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,375 parts In-Stock

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Digiode

USA . 1,017 parts In-Stock

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1,017

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SupplyDigital Components

Austria . 6,103 parts In-Stock

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Problanco Electronics

Mexico . 5,402 parts In-Stock

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TANS Electronics

Latvia . 4,023 parts In-Stock

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Corphita

USA . 2,020 parts In-Stock

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Kulean Microsystems

USA . 1,988 parts In-Stock

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Corohmni

South Africa . 333 parts In-Stock

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UHIMA Technologies

Türkiye . 216 parts In-Stock

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Overview

Looking for a high-quality RF transistor that delivers exceptional performance? Look no further than the MMBTH10LT3 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch products that meet the highest standards. The MMBTH10LT3 is perfect for applications in the ultra-high frequency band, offering customers reliable and efficient performance. With its NPN configuration and small outline package style, this transistor is a must-have for your RF small signal needs. Experience the value and benefits that Onsemi's MMBTH10LT3 brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good handling and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, offering high efficiency and reliability.

Surface Mount: YES

Allows for easy and quick installation on PCBs, saving time and effort during assembly.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications that require high-speed signal processing, making it ideal for advanced electronic devices.

Maximum Collector-Emitter Voltage: 25 V

Can handle relatively high voltages, ensuring stable performance in various circuit designs.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency allows for high-speed switching and amplification, making it suitable for demanding applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBTH10LT3 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTH10LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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