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MPS5179ZL1

Onsemi

MPS5179ZL1 by Onsemi

MPS5179ZL1 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and a package style of cylindrical PLASTIC/EPOXY.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,878 parts In-Stock

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Digiode

USA . 1,777 parts In-Stock

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Problanco Electronics

Mexico . 7,571 parts In-Stock

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TANS Electronics

Latvia . 4,553 parts In-Stock

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Kulean Microsystems

USA . 4,473 parts In-Stock

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SupplyDigital Components

Austria . 1,454 parts In-Stock

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UHIMA Technologies

Türkiye . 714 parts In-Stock

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Corphita

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Corohmni

South Africa . 79 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the MPS5179ZL1 by Onsemi. As a leader in RF Small Signal Bipolar Junction Transistors, Onsemi delivers top-notch quality and reliability. Ideal for amplifier applications in the very high-frequency band, this NPN transistor offers outstanding performance and precision. With a maximum collector-emitter voltage of 12V and a nominal transition frequency of 900MHz, the MPS5179ZL1 provides unparalleled value and benefits to customers seeking superior electronic components. Trust Onsemi to elevate your projects to new heights of excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring longevity and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor, easy to implement and troubleshoot in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, delivering optimal performance in signal amplification applications.

Package Shape: ROUND

Compact and space-efficient design, ideal for applications where space is limited.

Terminal Form: THROUGH-HOLE

Enables easy and secure mounting on circuit boards, facilitating manufacturing and assembly processes.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for high-frequency signal processing, making it ideal for radio frequency applications.

No. of Terminals: 3

Provides necessary connection points for the transistor to function effectively in circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical design for easy integration into various circuit layouts and system configurations.

Maximum Collector-Base Capacitance: 1 pF

Low capacitance minimizes signal distortion and interference, ensuring high fidelity in signal amplification.

Maximum Collector-Emitter Voltage: 12 V

Operating at a safe voltage level, suitable for low-power applications and signal processing tasks.

Transistor Element Material: SILICON

Silicon material offers high-performance characteristics for efficient signal amplification and processing.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate current levels, making it suitable for low to medium power amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead finish ensures reliable electrical connections and soldering in circuit board applications.

Terminal Position: BOTTOM

Bottom terminal position for easy connection to circuit boards and components, simplifying installation and maintenance.

Nominal Transition Frequency (fT): 900 MHz

High transition frequency enables fast signal processing and amplification, suitable for high-speed communication systems.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS5179ZL1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS5179ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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