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MPS5179RLRP

Onsemi

MPS5179RLRP by Onsemi

MPS5179RLRP by Onsemi is a NPN RF BJT with 3 terminals, ideal for amplifier applications in the VHF band. It has a max power dissipation of 0.2W, hFE of 25, and fT of 900MHz. The transistor operates at up to 150 °C, with VCE(max) of 12V and IC(max) of 0.05A.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

4,000

-

$0.066

$0.055

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,225 parts In-Stock

1+ parts

$0.051

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-

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2,225

$0.051

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Vyrian

USA . 1,945 parts In-Stock

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$0.054

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-

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1,945

$0.054

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,524 parts In-Stock

1+ parts

$0.049

100+ parts

-

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-

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-

1,524

$0.049

-

-

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Corohmni

South Africa . 71 parts In-Stock

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$0.054

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-

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71

$0.054

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QUARKTWIN TECHNOLOGY LTD

USA . 10,124 parts In-Stock

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10,124

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SupplyDigital Components

Austria . 6,769 parts In-Stock

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6,769

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Kulean Microsystems

USA . 3,412 parts In-Stock

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3,412

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TANS Electronics

Latvia . 955 parts In-Stock

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955

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UHIMA Technologies

Türkiye . 349 parts In-Stock

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349

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Problanco Electronics

Mexico . 312 parts In-Stock

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312

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Overview

Unlock the power of connectivity with the MPS5179RLRP by Onsemi. Crafted with precision and expertise, this RF Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability. Ideal for amplifier applications in the very high-frequency band, this NPN transistor boasts a minimum DC current gain of 25, ensuring optimal signal amplification. With a maximum collector-emitter voltage of 12V and a peak reflow temperature of 235 °C, this transistor is designed to exceed expectations. Elevate your projects with the trusted quality of Onsemi and experience seamless connectivity like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can protect the internal components of the transistor, ensuring longer lifespan and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuits and simplifies the design process.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for high-frequency applications, making it ideal for use in RF circuits and communication systems.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation rating, this transistor can handle high power levels without overheating.

Maximum Operating Temperature: 150 °C

Can operate at higher temperatures without performance degradation, suitable for a variety of operating environments.

Maximum Collector-Emitter Voltage: 12 V

Handles higher voltage levels, providing flexibility in circuit design and compatibility with a wide range of applications.

Nominal Transition Frequency (fT): 900 MHz

With a high transition frequency, this transistor is capable of amplifying high-frequency signals accurately and efficiently.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS5179RLRP attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS5179RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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