Loading...

A5T3572

Texas Instruments

A5T3572 by Texas Instruments

A5T3572 by Texas Instruments is an NPN BJT transistor with 3 terminals, 0.05 A max collector current, and 1000 MHz transition frequency. Ideal for amplifier applications in the ultra high-frequency band, it has a max power dissipation of 0.5 W and operates up to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,627 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,627

-

-

-

-

Digiode

USA . 2,835 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,835

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,590 parts In-Stock

1+ parts

$0.319

100+ parts

-

1k+ parts

$1.555

10k+ parts

-

1,590

$0.319

-

$1.555

-

DigiPath Technology Company

USA . 73 parts In-Stock

1+ parts

$0.351

100+ parts

-

1k+ parts

-

10k+ parts

-

73

$0.351

-

-

-

ChromeModa Solutions

Germany . 4,335 parts In-Stock

1+ parts

$0.358

100+ parts

$0.294

1k+ parts

-

10k+ parts

-

4,335

$0.358

$0.294

-

-

IDEA Electronic Components Group

UK . 1,311 parts In-Stock

1+ parts

$0.358

100+ parts

-

1k+ parts

$0.322

10k+ parts

-

1,311

$0.358

-

$0.322

-

Native Components

USA . 683 parts In-Stock

1+ parts

$0.678

100+ parts

-

1k+ parts

-

10k+ parts

-

683

$0.678

-

-

-

Northwest PG Solutions

USA . 1,994 parts In-Stock

1+ parts

$0.746

100+ parts

-

1k+ parts

-

10k+ parts

-

1,994

$0.746

-

-

-

Semicontronic

India . 300 parts In-Stock

1+ parts

$18.050

100+ parts

$17.599

1k+ parts

$17.508

10k+ parts

-

300

$18.050

$17.599

$17.508

-

AZTECH Wire

Italy . 650 parts In-Stock

1+ parts

$19.337

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$19.337

-

-

-

Ampacity Inc.

Singapore . 633 parts In-Stock

1+ parts

$50.050

100+ parts

-

1k+ parts

-

10k+ parts

-

633

$50.050

-

-

-

One Stop Electronics

USA . 1,308 parts In-Stock

1+ parts

$55.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,308

$55.050

-

-

-

Corphita

USA . 2,453 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,453

-

-

-

-

Corohmni

South Africa . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

400

-

-

-

-

Overview

Experience the superior quality and reliability of Texas Instruments with the A5T3572 RF Small Signal Bipolar Junction Transistor. Ideal for amplifier applications in the ultra-high frequency band, this NPN transistor offers unmatched performance and efficiency. With a maximum power dissipation of 0.5 W and a minimum DC current gain of 20, this transistor provides exceptional value and benefits to customers looking for high-quality components for their electronic projects. Trust Texas Instruments for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides durability and cost-effectiveness, making it ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and provide good efficiency and reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and makes integration easier.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing excellent performance in signal amplification.

Package Shape: ROUND

The round package shape allows for easy mounting and provides good thermal dissipation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for high-frequency applications such as RF amplification and signal processing.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels effectively.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers compactness and ease of handling during assembly.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures reliable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.

Maximum Collector-Base Capacitance: 0.85 pF

Low collector-base capacitance of 0.85pF minimizes feedback and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 13 V

With a maximum collector-emitter voltage of 13V, this transistor can be used in a variety of voltage conditions.

Transistor Element Material: SILICON

Silicon-based transistor element offers high performance, reliability, and stability.

Maximum Collector Current (IC): 0.05 A

This transistor can handle a maximum collector current of 0.05A, suitable for most low-power applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easy PCB mounting and soldering.

Nominal Transition Frequency (fT): 1000 MHz

With a nominal transition frequency of 1000MHz, this transistor is suitable for high-frequency signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) A5T3572 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

13 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

A5T3572 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

New products
from Texas Instruments 7

Similar products 1