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MPSH17RLRAG

Onsemi

MPSH17RLRAG by Onsemi

MPSH17RLRAG by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.625W and fT of 800MHz. Ideal for amplifier applications, it operates in the very high-frequency band with a max collector-emitter voltage of 15V.

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3

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1k+

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Digiode

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NAC Semi

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Authorized Procurement Solutions

USA . 32,000 parts In-Stock

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Kepictronics

USA . 18,970 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Corphita

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TANS Electronics

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South Africa . 279 parts In-Stock

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Overview

Looking for a reliable RF small signal BJT that delivers exceptional performance? Look no further than the MPSH17RLRAG by Onsemi. With a reputation for top-notch quality and innovation, Onsemi has designed this NPN transistor for amplifier applications in the very high-frequency band. Its through-hole terminal form and cylindrical package make it easy to use, while its high transition frequency of 800 MHz ensures optimal functionality. Trust Onsemi to provide you with a product that exceeds expectations and offers unmatched value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

Commonly used type in amplification circuits, offering reliable performance.

Configuration: SINGLE

Simplifies circuit design by using a single transistor.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in such circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure mounting on circuit boards.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, providing reliability in various operating conditions.

Maximum Collector-Emitter Voltage: 15 V

Suitable for applications with lower voltage requirements, ensuring compatibility with a wide range of circuits.

Nominal Transition Frequency (fT): 800 MHz

High transition frequency allows for fast signal processing and amplification, making it ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSH17RLRAG attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.9 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSH17RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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