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BF959RLRA

Onsemi

BF959RLRA by Onsemi

BF959RLRA by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operates at up to 150 °C, making it suitable for various RF small signal designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,293 parts In-Stock

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Digiode

USA . 1,126 parts In-Stock

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TANS Electronics

Latvia . 6,583 parts In-Stock

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Problanco Electronics

Mexico . 5,561 parts In-Stock

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Kulean Microsystems

USA . 4,722 parts In-Stock

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SupplyDigital Components

Austria . 3,945 parts In-Stock

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Northwest PG Solutions

USA . 2,245 parts In-Stock

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UHIMA Technologies

Türkiye . 881 parts In-Stock

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Native Components

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Corphita

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Corohmni

South Africa . 226 parts In-Stock

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Overview

Unleash the power of high-quality RF signal amplification with the BF959RLRA by Onsemi. Manufactured by industry leader Onsemi, this NPN bipolar junction transistor is designed for very high frequency band applications, offering unparalleled performance and reliability. Ideal for a wide range of electronic devices, the BF959RLRA delivers exceptional value and benefits to customers seeking superior signal processing capabilities. Upgrade your projects with the trusted quality and advanced technology of Onsemi's RF small signal transistors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection for the transistor while also being lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile in various applications.

Configuration: SINGLE

Single configuration transistors are easy to work with and suitable for simpler circuit designs.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Being capable of operating in very high frequency bands makes this transistor ideal for applications requiring fast signal processing.

Maximum Operating Temperature: 150 °C

This transistor can withstand high operating temperatures, ensuring reliability in harsh environments.

Maximum Collector-Emitter Voltage: 20 V

The high collector-emitter voltage rating allows for use in a variety of voltage levels without risking damage.

Transistor Element Material: SILICON

Silicon transistors are known for their efficiency and reliability, ensuring stable performance over time.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 A of collector current, making it suitable for low to medium power applications.

Nominal Transition Frequency (fT): 700 MHz

With a high nominal transition frequency, this transistor is capable of fast signal amplification and switching.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BF959RLRA attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF959RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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