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CS9018

Onsemi

CS9018 by Onsemi

CS9018 by Onsemi is a N-CHANNEL BJT with VCEsat of 0.6V, hFE of 29, and fT of 600MHz. Ideal for high-frequency applications due to its low VCEsat and high transition frequency. Packaged in plastic/epoxy, it has 3 terminals and can handle up to 12V.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 2,661 parts In-Stock

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Anansix

USA . 2,475 parts In-Stock

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Digiode

USA . 2,433 parts In-Stock

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LittleDiode

UK . 29 parts In-Stock

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Native Components

USA . 176 parts In-Stock

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$0.049

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$0.048

Kulean Microsystems

USA . 8,337 parts In-Stock

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Problanco Electronics

Mexico . 8,085 parts In-Stock

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SupplyDigital Components

Austria . 3,695 parts In-Stock

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TANS Electronics

Latvia . 3,549 parts In-Stock

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Corphita

USA . 1,340 parts In-Stock

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Northwest PG Solutions

USA . 1,313 parts In-Stock

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UHIMA Technologies

Türkiye . 550 parts In-Stock

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Corohmni

South Africa . 202 parts In-Stock

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Overview

Discover the superior performance and reliability of the CS9018 by Onsemi, a leading manufacturer in the industry. This RF Small Signal Bipolar Junction Transistor (BJT) offers exceptional quality and precision, making it ideal for high frequency band applications. With a single configuration and N-channel polarity, this transistor delivers maximum VCEsat of 0.6V and a minimum DC current gain of 29. Experience the benefits of its advanced technology, including low power dissipation and high collector-emitter voltage of 12V. Trust the CS9018 to provide unmatched value and efficiency for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and low resistance, suitable for high frequency applications.

Configuration: SINGLE

Simplified design and easy to use in circuits.

Maximum VCEsat: 0.6 V

Low saturation voltage helps in reducing power dissipation and improving efficiency.

Package Shape: ROUND

Ideal for ease of mounting and handling in circular layouts or applications.

Terminal Form: WIRE

Allows for easy and secure connections in circuits.

Highest Frequency Band: HIGH FREQUENCY BAND

Suitable for use in high-frequency applications where fast switching is required.

No. of Terminals: 3

Provides necessary connection points for the transistor in a simple package.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Compact and space-saving design for efficient use of PCB real estate.

Minimum DC Current Gain (hFE): 29

Provides adequate current gain for various amplification applications.

Maximum Collector-Base Capacitance: 1.7 pF

Low capacitance helps in high-frequency performance and stability.

Maximum Collector-Emitter Voltage: 12 V

Can handle moderate voltage levels in circuits.

Transistor Element Material: SILICON

Common material known for its reliability and efficiency in transistor applications.

Terminal Position: BOTTOM

Allows for easy mounting on PCBs and efficient circuit layout.

Nominal Transition Frequency (fT): 600 MHz

Suitable for high-frequency applications where fast switching speeds are required.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) CS9018 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

1.7 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

29

Highest Frequency Band:

HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

CS9018 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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