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TIS109

Texas Instruments

TIS109 by Texas Instruments

TIS109 by Texas Instruments is a NPN BJT transistor with max. collector-emitter voltage of 30V, ideal for switching applications. It has a max. power dissipation of 0.625W and nominal transition frequency of 350MHz, suitable for high-frequency operations in cylindrical package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,350 parts In-Stock

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6,350

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Digiode

USA . 2,062 parts In-Stock

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2,062

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Distributors (Availability)

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Parana Technologies

USA . 656 parts In-Stock

1+ parts

$0.752

100+ parts

-

1k+ parts

$1.757

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656

$0.752

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$1.757

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DigiPath Technology Company

USA . 1,468 parts In-Stock

1+ parts

$0.828

100+ parts

$0.762

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1,468

$0.828

$0.762

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ChromeModa Solutions

Germany . 5,648 parts In-Stock

1+ parts

$0.845

100+ parts

$0.693

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5,648

$0.845

$0.693

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IDEA Electronic Components Group

UK . 989 parts In-Stock

1+ parts

$0.845

100+ parts

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$0.760

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989

$0.845

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$0.760

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AZTECH Wire

Italy . 640 parts In-Stock

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$5.476

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640

$5.476

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Ampacity Inc.

Singapore . 128 parts In-Stock

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$23.050

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128

$23.050

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Semicontronic

India . 555 parts In-Stock

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$24.050

100+ parts

$23.449

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$23.328

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555

$24.050

$23.449

$23.328

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One Stop Electronics

USA . 1,448 parts In-Stock

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$34.050

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1,448

$34.050

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Corphita

USA . 2,896 parts In-Stock

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2,896

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Corohmni

South Africa . 327 parts In-Stock

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Overview

Elevate your electronic projects with the TIS109 by Texas Instruments, a high-quality RF Small Signal Bipolar Junction Transistor perfect for a variety of applications. Manufactured by industry leader Texas Instruments, this NPN transistor offers reliable performance in switching applications with a maximum power dissipation of 0.625W. With a minimum DC current gain of 20 and a maximum operating temperature of 150°C, the TIS109 provides exceptional value and efficiency. Upgrade your designs with the TIS109 and experience the benefits of Texas Instruments' superior technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, providing reliable performance.

Configuration: SINGLE

The single configuration simplifies circuit design and integration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such tasks.

Package Shape: ROUND

The round shape allows for easy mounting and integration into circuits.

Terminal Form: WIRE

Wire terminals offer easy connections and soldering, aiding in the assembly process.

No. of Terminals: 3

Having 3 terminals allows for versatile circuit configurations and connections.

Maximum Power Dissipation: 0.625 W

With a maximum power dissipation of 0.625W, the transistor can handle moderate power loads efficiently.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact form factor, saving space in circuit designs.

Minimum DC Current Gain (hFE): 20

A higher minimum DC current gain ensures stable and predictable amplification characteristics.

Maximum Operating Temperature: 150 °C

The transistor can operate effectively at high temperatures, providing reliability in various environments.

Maximum Collector-Base Capacitance: 10 pF

Low collector-base capacitance minimizes signal distortion, making it suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 30 V

The 30V maximum collector-emitter voltage allows the transistor to handle higher voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.8 A

With a maximum collector current of 0.8A, the transistor can handle moderate to high current loads.

Terminal Position: BOTTOM

The bottom terminal position simplifies mounting and ensures easy connections in circuit layouts.

Nominal Transition Frequency (fT): 350 MHz

The high transition frequency of 350MHz allows for fast switching speeds in high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS109 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

10 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS109 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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