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TIS129

Texas Instruments

TIS129 by Texas Instruments

TIS129 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 800MHz. Ideal for amplifier applications, it has a max power dissipation of 0.25W and operates in the ultra-high frequency band. The package is cylindrical with wire terminals at the bottom.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,874 parts In-Stock

1+ parts

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4,874

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Digiode

USA . 4,234 parts In-Stock

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4,234

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,837 parts In-Stock

1+ parts

$0.664

100+ parts

-

1k+ parts

$1.716

10k+ parts

-

1,837

$0.664

-

$1.716

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DigiPath Technology Company

USA . 247 parts In-Stock

1+ parts

$0.731

100+ parts

$0.673

1k+ parts

-

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247

$0.731

$0.673

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IDEA Electronic Components Group

UK . 1,673 parts In-Stock

1+ parts

$0.746

100+ parts

-

1k+ parts

$0.671

10k+ parts

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1,673

$0.746

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$0.671

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ChromeModa Solutions

Germany . 782 parts In-Stock

1+ parts

$0.746

100+ parts

$0.612

1k+ parts

-

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782

$0.746

$0.612

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Ampacity Inc.

Singapore . 417 parts In-Stock

1+ parts

$1.050

100+ parts

-

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417

$1.050

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AZTECH Wire

Italy . 511 parts In-Stock

1+ parts

$11.280

100+ parts

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511

$11.280

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Semicontronic

India . 300 parts In-Stock

1+ parts

$28.050

100+ parts

$27.349

1k+ parts

$27.208

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300

$28.050

$27.349

$27.208

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One Stop Electronics

USA . 500 parts In-Stock

1+ parts

$31.050

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500

$31.050

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Corphita

USA . 4,389 parts In-Stock

1+ parts

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4,389

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Corohmni

South Africa . 259 parts In-Stock

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259

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Overview

Enhance your electronic projects with the TIS129 by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers top-notch RF Small Signal Bipolar Junction Transistors like the TIS129. Whether you're designing an amplifier or working in the ultra-high-frequency band, this NPN transistor offers excellent performance and durability. With a maximum power dissipation of 0.25W and a nominal transition frequency of 800MHz, the TIS129 provides value and efficiency for all your electronic needs. Elevate your designs with the trusted name of Texas Instruments and the innovative features of the TIS129.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into electronic circuits.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra high frequency band allows this transistor to support high-speed signal processing.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25 W, this transistor can handle moderate power levels effectively.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures reliability in various environmental conditions.

Maximum Collector-Emitter Voltage: 25 V

The maximum collector-emitter voltage of 25 V allows for flexibility in circuit design and voltage requirements.

Nominal Transition Frequency: 800 MHz

The high nominal transition frequency of 800 MHz indicates fast response times and high-frequency operation.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) TIS129 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.8 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIS129 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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