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FH102A-TR-E

Onsemi

FH102A-TR-E by Onsemi

FH102A-TR-E by Onsemi is an NPN RF BJT with 0.5W power dissipation, 90 min hFE, and 5000MHz fT. Ideal for high-frequency applications in electronics, it operates up to 150 °C with a collector current of 0.07A in surface-mount designs.

Median Price

$0.387

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

$0.373

1k+ parts

$0.309

10k+ parts

$0.276

23,000

-

$0.373

$0.309

$0.276

DigiKey

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.390

10k+ parts

-

23,000

-

-

$0.390

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Verical

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.387

10k+ parts

$0.345

23,000

-

-

$0.387

$0.345

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,652 parts In-Stock

1+ parts

$0.254

100+ parts

-

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1,652

$0.254

-

-

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Digiode

USA . 2,113 parts In-Stock

1+ parts

$0.291

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2,113

$0.291

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DigiKey Marketplace

USA . 23,000 parts In-Stock

1+ parts

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100+ parts

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23,000

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 345 parts In-Stock

1+ parts

$0.254

100+ parts

-

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345

$0.254

-

-

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Corphita

USA . 2,099 parts In-Stock

1+ parts

$0.275

100+ parts

-

1k+ parts

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2,099

$0.275

-

-

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Component Stockers USA

USA . 23,328 parts In-Stock

1+ parts

$0.310

100+ parts

$0.290

1k+ parts

$0.260

10k+ parts

$0.260

23,328

$0.310

$0.290

$0.260

$0.260

Continental Prestige Electronics

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.312

10k+ parts

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23,000

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-

$0.312

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TANS Electronics

Latvia . 5,941 parts In-Stock

1+ parts

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5,941

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Perfect Parts

USA . 5,086 parts In-Stock

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5,086

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Kulean Microsystems

USA . 4,959 parts In-Stock

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4,959

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SupplyDigital Components

Austria . 4,303 parts In-Stock

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4,303

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Problanco Electronics

Mexico . 4,108 parts In-Stock

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4,108

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Northwest PG Solutions

USA . 1,272 parts In-Stock

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1,272

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UHIMA Technologies

Türkiye . 344 parts In-Stock

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344

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Native Components

USA . 74 parts In-Stock

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74

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Overview

Elevate your RF signal performance with the FH102A-TR-E by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their products. This NPN small signal bipolar junction transistor is perfect for a wide range of applications, offering customers unparalleled value and benefits. With a high DC current gain and maximum power dissipation, this transistor ensures optimal performance even in high-temperature environments. Upgrade your electronics with the FH102A-TR-E and experience the difference today.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits which makes this product versatile and suitable for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and cost in production processes.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5 W, this transistor can handle moderate power levels, making it suitable for various signal amplification tasks.

Minimum DC Current Gain (hFE): 90

A high DC current gain of 90 ensures efficient signal amplification with minimal input current, promoting energy efficiency in the circuit.

Maximum Operating Temperature: 150 °C

Operating at up to 150 °C, this transistor can withstand high temperature environments, adding to its reliability in different conditions.

Maximum Collector Current (IC): 0.07 A

With a maximum collector current of 0.07 A, this transistor can handle moderate current levels, suitable for small signal amplification applications.

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish provides excellent solderability and reliability, ensuring a secure connection in the assembly process.

Maximum Time At Peak Reflow Temperature (s): 30

The short peak reflow time of 30 seconds minimizes the exposure of the component to high temperatures during assembly, reducing the risk of damage.

Peak Reflow Temperature °C: 260

Operating at a peak reflow temperature of 260 °C ensures proper solder reflow during assembly, contributing to the overall reliability of the component.

Nominal Transition Frequency (fT): 5000 MHz

With a high transition frequency of 5000 MHz, this transistor offers excellent high frequency performance, making it suitable for RF signal amplification applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) FH102A-TR-E attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

90

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Nominal Transition Frequency (fT):

Trade Compliance

FH102A-TR-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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