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NSF2250WT1G

Onsemi

NSF2250WT1G by Onsemi

The Onsemi NSF2250WT1G is an NPN RF BJT transistor with a max operating temperature of 150 °C. It has a min DC current gain of 120 and a nominal transition frequency of 2300 MHz, making it suitable for ultra-high-frequency amplifier applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 32,950 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

32,950

-

$0.132

$0.110

$0.098

DigiKey

USA . 32,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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$0.110

32,950

-

-

-

$0.110

Verical

USA . 32,950 parts In-Stock

1+ parts

-

100+ parts

-

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$0.122

32,950

-

-

-

$0.122

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 352 parts In-Stock

1+ parts

$0.103

100+ parts

-

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352

$0.103

-

-

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Vyrian

USA . 1,007 parts In-Stock

1+ parts

$0.108

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-

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1,007

$0.108

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,198 parts In-Stock

1+ parts

$0.097

100+ parts

-

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2,198

$0.097

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-

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Corohmni

South Africa . 328 parts In-Stock

1+ parts

$0.108

100+ parts

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328

$0.108

-

-

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Continental Prestige Electronics

USA . 32,950 parts In-Stock

1+ parts

-

100+ parts

-

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$0.098

10k+ parts

-

32,950

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-

$0.098

-

Problanco Electronics

Mexico . 8,363 parts In-Stock

1+ parts

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8,363

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TANS Electronics

Latvia . 4,582 parts In-Stock

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4,582

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Kulean Microsystems

USA . 4,330 parts In-Stock

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4,330

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SupplyDigital Components

Austria . 2,153 parts In-Stock

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2,153

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UHIMA Technologies

Türkiye . 757 parts In-Stock

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757

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Overview

Elevate your RF signal amplification with the NSF2250WT1G by Onsemi. Crafted with precision and expertise, this NPN bipolar junction transistor delivers superior performance in the ultra-high frequency band. Whether you're designing cutting-edge amplifiers or pushing the boundaries of technology, this transistor's small outline package and gull wing terminals provide ease of use and seamless integration. Trust in Onsemi's reputation for quality and innovation, and unlock a world of possibilities with the NSF2250WT1G. Experience unparalleled value and reliability in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Commonly used polarity for amplification purposes, ensuring compatibility with standard circuit designs.

Configuration: SINGLE

Simplified setup with a single transistor, making it easier to integrate into circuit designs.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, simplifying the assembly process.

Maximum Power Dissipation (Abs): 0.202 W

Efficient power handling capability, ensuring reliable operation under varying load conditions.

Nominal Transition Frequency (fT): 2300 MHz

High transition frequency for fast signal response, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) NSF2250WT1G attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.2 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

120

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSF2250WT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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