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2SC2814

Onsemi

2SC2814 by Onsemi

Onsemi's 2SC2814 is an NPN RF BJT with a max fT of 320 MHz. It has a Pd of 0.15 W and Vceo of 20V, ideal for amplifier applications in the VHF band. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.

Median Price

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Native Components

USA . 691 parts In-Stock

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Northwest PG Solutions

USA . 2,020 parts In-Stock

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TANS Electronics

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Corphita

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Overview

Unlock the potential of your electronic projects with the high-quality 2SC2814 RF Small Signal Bipolar Junction Transistor from Onsemi. Designed for very high-frequency applications, this NPN transistor offers exceptional amplification capabilities in a compact, surface-mount package. Whether you're working on amplifiers or other RF circuits, the 2SC2814 delivers reliable performance with a minimum DC current gain of 40 and a nominal transition frequency of 320 MHz. Trust Onsemi's expertise in semiconductor manufacturing to bring you a versatile and efficient component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits and offer high efficiency and fast switching speed.

Configuration: SINGLE

Simplified design with a single transistor configuration for easy integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and secure placement on circuit boards, enhancing reliability.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections and ease of assembly during PCB manufacturing.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring very high-frequency operation, ensuring reliable signal processing.

Maximum Power Dissipation (Abs): 0.15 W

With a high maximum power dissipation, the transistor can handle power efficiently without overheating.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving package style ideal for devices with limited board space.

Minimum DC Current Gain (hFE): 40

High minimum DC current gain ensures stable and consistent amplification of the input signal.

Maximum Operating Temperature: 125 °C

Can operate efficiently at high temperatures, making it suitable for a wide range of environmental conditions.

Maximum Collector-Base Capacitance: 0.15 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency response.

Maximum Collector-Emitter Voltage: 20 V

Allows for higher voltage handling capabilities, expanding the range of applications for the transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and durability for long-term use.

Maximum Collector Current (IC): 0.03 A

Capable of handling moderate collector current, suitable for various amplifier and signal processing applications.

Terminal Position: DUAL

Dual terminal position allows for flexible placement and connections, enhancing circuit design possibilities.

Nominal Transition Frequency (fT): 320 MHz

High nominal transition frequency enables fast signal switching and processing, ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC2814 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.15 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2814 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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