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2SC2814-2

Onsemi

2SC2814-2 by Onsemi

Onsemi's 2SC2814-2 is an NPN RF BJT with a max fT of 320 MHz. It has a max IC of 0.03 A and operates up to 125 °C. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 807 parts In-Stock

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Digiode

USA . 455 parts In-Stock

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Native Components

USA . 203 parts In-Stock

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$15.585

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Northwest PG Solutions

USA . 1,073 parts In-Stock

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$17.144

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$15.429

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Problanco Electronics

Mexico . 6,737 parts In-Stock

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SupplyDigital Components

Austria . 5,993 parts In-Stock

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Kulean Microsystems

USA . 5,753 parts In-Stock

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TANS Electronics

Latvia . 370 parts In-Stock

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Corphita

USA . 335 parts In-Stock

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UHIMA Technologies

Türkiye . 271 parts In-Stock

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Corohmni

South Africa . 220 parts In-Stock

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Overview

Elevate your RF amplifier designs with the 2SC2814-2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their RF Small Signal Bipolar Junction Transistors. With a very high frequency band and small outline package style, this NPN transistor is perfect for applications requiring precision and efficiency. Experience the benefits of this transistor's high transition frequency, low power dissipation, and superior performance. Upgrade your projects with the 2SC2814-2 and take your amplification to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability while keeping the overall weight of the product low.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in amplifier circuits.

Surface Mount: YES

Ease of assembly and space-saving benefits for compact electronic designs.

Maximum Power Dissipation (Abs): 0.15 W

Sufficient power handling capability for amplification tasks without risking overheating.

Maximum Collector-Base Capacitance: 0.15 pF

Low capacitance minimizes signal distortion and improves overall performance in high-frequency applications.

Nominal Transition Frequency (fT): 320 MHz

High transition frequency indicates fast switching speeds and suitability for very high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2SC2814-2 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.15 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC2814-2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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