Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The NXP Semiconductors BFU520XRVL is a RF Small Signal BJT transistor with NPN polarity. It is designed for amplifier applications in the L Band frequency range, with a max operating temperature of 150°C and a min DC current gain of 60 (hFE). This surface mount transistor has a rectangular package shape and four terminals.
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The use of plastic/epoxy as the package body material provides durability and protection for the transistor, making it suitable for various applications.
The NPN configuration enables the transistor to amplify analog signals, making it ideal for use in amplifiers and other similar applications.
The single configuration simplifies circuit design, making it easier to integrate the transistor into electronic circuits.
The transistor's suitability for amplifier applications ensures efficient signal amplification, making it a reliable choice for amplification needs.
The surface mount capability allows for easy and convenient placement on circuit boards, saving space and providing efficient assembly processes.
The rectangular package shape offers compatibility with standard electronic components and facilitates easy integration into electronic systems.
The gull wing terminal form provides reliable electrical connections and enhances the transistor's stability, ensuring optimal performance in various environments.
The ability to operate in the L Band frequency range makes this transistor suitable for applications requiring high-frequency signal processing.
The presence of a single element simplifies the transistor's operation and enables straightforward implementation in electronic circuits.
The four terminals offer flexibility in connections and ensure proper electrical connectivity in diverse circuit configurations.
With a maximum power dissipation of 0.45 W, this transistor can handle moderate power levels without compromising performance.
The small outline package style allows for compact circuit designs and efficient space utilization, making it suitable for compact electronic devices.
The minimum DC current gain of 60 ensures reliable signal amplification, providing consistent performance across different operating conditions.
The high maximum operating temperature of 150°C enables the transistor to withstand demanding temperature environments, enhancing its overall reliability.
The low maximum collector-base capacitance minimizes unwanted coupling effects, ensuring efficient signal processing and reducing potential signal distortions.
With a maximum collector-emitter voltage rating of 16 V, this transistor can handle moderate voltage levels, making it suitable for various circuit designs.
The use of silicon as the transistor element material ensures high performance, durability, and compatibility with a wide range of electronic applications.
The low minimum operating temperature of -40°C allows for reliable operation in extreme temperature conditions, making it suitable for demanding environments.
With a maximum collector current rating of 0.05 A, this transistor can handle moderate current levels, making it suitable for various circuit applications.
The tin terminal finish provides a protective coating and enhances the transistor's solderability, ensuring secure and reliable electrical connections.
The dual terminal position offers flexibility in circuit connections and facilitates compatibility with various circuit configurations.
The moisture sensitivity level of 1 indicates that this transistor is resistant to moisture-induced failures, ensuring reliable performance even in humid environments.
The case connection to the collector ensures efficient heat dissipation, enhancing the overall thermal management and reliability of the transistor.
The maximum time allowed at the peak reflow temperature of 260°C is 30 seconds, ensuring safe and reliable soldering processes during assembly.
The peak reflow temperature of 260°C enables the secure soldering of the transistor during assembly, ensuring reliable electrical connections.
The compliance with the AEC-Q101 and IEC-60134 standards ensures the quality, reliability, and compatibility of this transistor with industry requirements.
With a nominal transition frequency of 10500 MHz, this transistor offers high-speed switching capabilities, making it suitable for applications requiring quick signal processing.
RF Small Signal Bipolar Junction Transistors (BJT) BFU520XRVL attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFU520XRVL Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00
PCN Packaging - All Dev Label Update 15/Dec/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
ULN2803A
Rochester Electronics
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
BSS138BKW,115
NXP Semiconductors
NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.
MMSZ5245BT1G
Onsemi
MMSZ5245BT1G by Onsemi is a Zener diode with 15V nominal reference voltage, 8.5mA test current, and 16 ohm dynamic impedance. It is used in applications requiring precise voltage regulation in a compact SMD package for temperatures ranging from -55 to 150°C.
DS18B20Z+T&R
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Body Material: PLASTIC/EPOXY;
1N4148
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
2N2222A
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
MBRM140T1G
MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.
LD1117S33CTR
STMicroelectronics
STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
1N4148WS
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
Transistor & Electronic
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
SN6505BDBVR
Texas Instruments
SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.
BSS138
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 10 pF; JEDEC-95 Code: TO-236AB;
Fairchild Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Output Current-1: 1.5 A; No. of Outputs: 1; Qualification Status: Not Qualified;
BFR92A
Philips Components
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Emitter Voltage: 15 V;
SD1438
NPN; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
2N3643
Space Power Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
BSX28
BSX28 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 175 °C, and supports a collector current of 0.5 A. Its compact cylindrical package ensures efficient performance in various electronic circuits.
BFW17A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .15 A;
MPSH17RL
MPSH17RL by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for amplifier applications in the very high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. The transistor operates at a max temperature of 150 °C, making it suitable for various RF signal amplification needs.
MSC81118
STMicroelectronics' MSC81118 is an NPN BJT transistor with a max power dissipation of 6.3W, ideal for amplifier applications in L Band frequencies. Featuring a min hFE of 15 and max IC of 0.2A, this transistor operates at up to 200 °C with a collector-base capacitance of 3.2pF.
2N2222
SPC TECHNOLOGY/ MULTICOMP
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
TIS62A
TIS62A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.5W, fT of 500MHz, and hFE min of 20. It is used in amplifier applications due to its very high frequency band capability and max. collector-emitter voltage of 12V.
MMBTH17LT1
MMBTH17LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for ultra-high frequency band applications like amplifiers, featuring a small outline package with gull wing terminals. The transistor's silicon element material ensures high performance in RF signal amplification.
BFR520T
The NXP Semiconductors BFR520T is a RF Small Signal BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the L Band frequency range up to 9000 MHz, with a max power dissipation of 0.3W and a min DC current gain of 60.
BFR96
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16 W; Maximum Collector Current (IC): .075 A; Terminal Form: FLAT;
BFR93AW
Infineon Technologies
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .09 A;
BFU730LXZ
The NXP Semiconductors BFU730LXZ is an NPN RF Small Signal BJT with a max power dissipation of 0.16W and min DC current gain of 205. Ideal for applications requiring a max collector current of 0.03A, such as surface mount designs in telecommunications and wireless communication systems.
BFP196WH6327XTSA1
BFP196WH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 7500 MHz, and max collector current of 0.15A. This small outline package transistor is designed for amplifier circuits in automotive electronics meeting AEC-Q101 standards.
934059126115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; No. of Terminals: 4;
BF240
BF240 by Onsemi is a NPN BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 40V, max collector current of 0.025A, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
BF959RL1G
BF959RL1G by Onsemi is a NPN BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, making it suitable for amplifier applications. With a max power dissipation of 1.5W and a collector-emitter voltage of 20V, it can handle various RF signal amplification tasks efficiently.
BF224RL1
BF224RL1 by Onsemi is a NPN RF BJT with max. 30V VCE, 0.05A IC, and 850MHz fT. Ideal for very high frequency band applications due to its single configuration and cylindrical package style. Operates up to 150 °C with through-hole terminals for easy installation.
HFA3135IHZ96
Renesas Electronics
The Renesas Electronics HFA3135IHZ96 is a PNP RF BJT transistor with 0.25V VCEsat, 7000MHz fT, and 4V VCEO. Ideal for amplifier applications in the UHF band, it features a small outline package with Gull Wing terminals and operates b/w -40 to 85°C.
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BFU590GX
The NXP Semiconductors BFU590GX is a RF Small Signal BJT transistor with NPN polarity. It has a max operating temperature of 150°C and can handle a max collector-emitter voltage of 12V. This transistor is commonly used in amplifiers for L Band applications.
BFU530AR
The NXP Semiconductors BFU530AR is a RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max collector-emitter voltage of 12V, collector current of 0.04A, and transition frequency of 11GHz. This surface-mount device comes in a small outline package with Gull Wing terminals.
BFU520AR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
BFU550AR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;
BFU520WX
The NXP Semiconductors BFU520WX is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 10GHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly. Operating from -40°C, it offers a peak reflow temperature of 260°C and complies with AEC-Q101 and IEC-60134 standards.
BFU520YX
The NXP Semiconductors BFU520YX is an RF NPN BJT transistor with a max fT of 10 GHz. It has a max VCE of 12V and Ptot of 0.45W, suitable for L Band applications like amplifiers. The package is a small outline with Gull Wing terminals, operating b/w -40 to 150°C.
BFU550XAR
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
BFU550XRR
BFU550WF
The NXP Semiconductors BFU550WF is an RF BJT transistor with a max fT of 11GHz. It operates in L Band, has a Vce of 12V, and IC of 0.05A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
BFU550XRVL
BFU590QX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .2 A; No. of Elements: 1;
BFU550AVL
The NXP Semiconductors BFU550AVL is a RF Small Signal BJT transistor with NPN polarity. It is a single configuration amplifier, suitable for L Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 11 GHz, it offers high performance in a small outline package.
BFU550VL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
BFU550XVL
The NXP Semiconductors BFU550XVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies up to 11GHz. It features a max collector-emitter voltage of 12V, collector current of 0.05A, and a transition frequency of 11GHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BFU550R
BFU550WX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
BFU520VL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
BFU520XR
BFU520XR,235
BFU520XRR
The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.
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