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UMX5NTR

ROHM

UMX5NTR by ROHM

ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.

Median Price

$0.620

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DigiKey

USA . 4,143 parts In-Stock

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$0.620

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$0.244

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$0.166

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$0.123

4,143

$0.620

$0.244

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$0.123

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Freelance Electronics

USA . 200 parts In-Stock

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$0.057

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Nova Conductors

Japan . 150 parts In-Stock

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$0.120

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$0.120

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Chip Stock

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Bristol Electronics

USA . 5,235 parts In-Stock

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$0.281

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$0.113

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$0.084

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Vyrian

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Continental Prestige Electronics

USA . 6,251 parts In-Stock

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$0.117

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Argo Parts USA

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Netroflash

USA . 500 parts In-Stock

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Semicontronic

India . 1,559 parts In-Stock

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$0.408

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$0.398

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$0.396

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Ampacity Inc.

Singapore . 1,298 parts In-Stock

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$0.408

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Aztec Data Supply Inc.

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$1.568

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Perfect Parts

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iodParts Technologies Inc.

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Kepictronics

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Overview

Discover the power of the UMX5NTR from ROHM, a high-quality RF Small Signal Bipolar Junction Transistor that amplifies signals with precision. This NPN transistor boasts a small outline package, making it ideal for a wide range of applications. With a maximum operating temperature of 150°C and a nominal transition frequency of 3200 MHz, this transistor offers top-notch performance and reliability. Experience superior signal amplification and efficiency with the UMX5NTR, designed to exceed your expectations. Elevate your projects with ROHM's exceptional technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for better control and flexibility in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular shape provides a compact design, suitable for space-constrained applications.

Maximum Power Dissipation (Abs): 0.15 W

Allows for power handling capabilities, ensuring reliable operation under specified conditions.

Minimum DC Current Gain (hFE): 27

Higher hFE value indicates better amplification capabilities, making this transistor ideal for amplifier circuits.

Maximum Operating Temperature: 150 °C

Can operate at relatively high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Base Capacitance: 1.55 pF

Low capacitance value minimizes signal distortion and improves overall performance in high-frequency applications.

Maximum Collector-Emitter Voltage: 11 V

Can sustain high voltage levels, suitable for applications requiring high voltage handling capability.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate current levels, suitable for low power applications.

Nominal Transition Frequency (fT): 3200 MHz

High transition frequency allows for efficient amplification of high-frequency signals, making this transistor suitable for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) UMX5NTR attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.55 pF

Maximum Collector-Emitter Voltage:

11 V

Configuration:

Minimum DC Current Gain (hFE):

27

JESD-30 Code:

R-PDSO-G6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

UMX5NTR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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