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KSC2223R

Onsemi

KSC2223R by Onsemi

KSC2223R by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.3V, ideal for amplifier applications in the VHF band. It has a min hFE of 40, operates up to 150 °C, and features a max IC of 0.02A in a small outline package with Gull Wing terminals.

Median Price

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In-Stock Inventory

1k+

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Vyrian

USA . 2,195 parts In-Stock

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Digiode

USA . 1,435 parts In-Stock

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Problanco Electronics

Mexico . 5,511 parts In-Stock

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Kulean Microsystems

USA . 5,370 parts In-Stock

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SupplyDigital Components

Austria . 4,848 parts In-Stock

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Supply Digital

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Corphita

USA . 1,727 parts In-Stock

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UHIMA Technologies

Türkiye . 803 parts In-Stock

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TANS Electronics

Latvia . 581 parts In-Stock

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Corohmni

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Overview

Discover unparalleled performance and reliability with the KSC2223R RF Small Signal BJT from Onsemi. Designed for amplifier applications in the very high-frequency band, this NPN transistor boasts a maximum VCEsat of only 0.3V and a minimum DC current gain of 40. With a maximum power dissipation of 0.15W and a compact gull wing package shape, this transistor offers exceptional value and benefits for your electronic projects. Trust Onsemi's reputation for quality and innovation, and unlock limitless possibilities with the KSC2223R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and durability, making the transistor reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easier to work with.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio and signal amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum VCEsat: 0.3 V

Low VCEsat results in lower power dissipation and better efficiency, making the transistor suitable for low-power applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and soldering on PCBs, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and easy soldering, ensuring reliable connections in various circuit designs.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Designed for very high frequency applications, making it ideal for use in RF circuits and high-speed signal processing.

No. of Terminals: 3

Three terminals provide necessary connections for proper transistor operation and flexibility in circuit designs.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation allows for efficient operation and minimizes heat generation, enhancing overall reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs, making it suitable for compact electronic devices and applications.

Minimum DC Current Gain (hFE): 40

High DC current gain ensures stable and consistent amplification performance, essential for accurate signal processing.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in a variety of environments, ensuring versatility and reliability in different applications.

Maximum Collector-Emitter Voltage: 20 V

Maximum collector-emitter voltage rating of 20V provides a safety margin for voltage spikes and ensures reliable operation in various circuit conditions.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and high reliability, ensuring consistent performance over the transistor's operational lifetime.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for use in extreme conditions, making the transistor suitable for industrial and automotive applications.

Maximum Collector Current (IC): 0.02 A

Maximum collector current rating of 0.02A allows for handling moderate current levels, suitable for various signal amplification tasks.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and allows for easy connections in different circuit configurations.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency ensures fast signal processing and response time, making the transistor ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC2223R attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

KSC2223R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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