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KSC2223YMTF

Onsemi

KSC2223YMTF by Onsemi

KSC2223YMTF by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max operating temp of 150°C and can handle a max collector-emitter voltage of 20V. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mounting.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 999,213 parts In-Stock

1+ parts

-

100+ parts

$0.032

1k+ parts

$0.027

10k+ parts

$0.024

999,213

-

$0.032

$0.027

$0.024

Verical

USA . 453,000 parts In-Stock

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453,000

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DigiKey

USA . 114,000 parts In-Stock

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$0.040

114,000

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$0.040

Distributors (In-Stock)

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Digiode

USA . 526 parts In-Stock

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$0.027

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526

$0.027

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Vyrian

USA . 1,266 parts In-Stock

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$0.028

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1,266

$0.028

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DigiKey Marketplace

USA . 114,000 parts In-Stock

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114,000

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Flip Electronics

USA . 54,000 parts In-Stock

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54,000

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ComSIT Distribution GmbH

Germany . 24,000 parts In-Stock

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24,000

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Bristol Electronics

USA . 12,000 parts In-Stock

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12,000

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R&J Components

USA . 3,000 parts In-Stock

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3,000

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Sea View Technologies

USA . 3,000 parts In-Stock

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3,000

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Continental Prestige Electronics

USA . 225 parts In-Stock

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$0.013

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225

$0.013

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Corphita

USA . 1,635 parts In-Stock

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$0.025

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1,635

$0.025

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Corohmni

South Africa . 422 parts In-Stock

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$0.028

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422

$0.028

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Perfect Parts

USA . 13,158 parts In-Stock

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Assy Fe

Spain . 12,000 parts In-Stock

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Problanco Electronics

Mexico . 5,723 parts In-Stock

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Kulean Microsystems

USA . 5,110 parts In-Stock

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Supply Digital

USA . 2,849 parts In-Stock

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2,849

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Kepictronics

USA . 1,880 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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TANS Electronics

Latvia . 1,478 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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SupplyDigital Components

Austria . 602 parts In-Stock

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UHIMA Technologies

Türkiye . 8 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the KSC2223YMTF from Onsemi. Crafted with precision and expertise, this RF Small Signal Bipolar Junction Transistor offers exceptional performance in amplifier applications. With a very high frequency band and a minimum DC current gain of 90, this NPN transistor delivers reliable results every time. Its compact size and surface mount design make it ideal for a wide range of projects. Trust in Onsemi's unmatched quality and experience the difference with the KSC2223YMTF. Elevate your creations and unleash endless possibilities with this innovative component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other electronic circuits due to their versatility and reliability.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Surface mount package allows for easy and convenient installation on circuit boards.

Maximum Collector-Emitter Voltage: 20 V

Suitable for applications where a maximum voltage of 20V is required, providing flexibility in circuit design.

Maximum Collector Current (IC): 0.02 A

Can handle a maximum collector current of 0.02A, making it suitable for low power applications.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency enables the transistor to operate effectively in very high frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSC2223YMTF attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

90

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSC2223YMTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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