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A5T3571

Texas Instruments

A5T3571 by Texas Instruments

A5T3571 by Texas Instruments is an NPN BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 20 and a nominal transition frequency of 1200 MHz, making it suitable for amplifier applications in the ultra-high-frequency band. The package style is cylindrical with a plastic/epoxy body material and wire terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,108 parts In-Stock

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Digiode

USA . 419 parts In-Stock

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419

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Parana Technologies

USA . 893 parts In-Stock

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$0.829

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$1.795

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893

$0.829

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$1.795

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DigiPath Technology Company

USA . 1,323 parts In-Stock

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$0.913

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$0.840

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IDEA Electronic Components Group

UK . 1,596 parts In-Stock

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$0.932

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$0.839

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ChromeModa Solutions

Germany . 150 parts In-Stock

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$0.932

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$0.764

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150

$0.932

$0.764

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Native Components

USA . 645 parts In-Stock

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$1.742

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645

$1.742

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Northwest PG Solutions

USA . 1,593 parts In-Stock

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$1.916

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AZTECH Wire

Italy . 801 parts In-Stock

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$16.268

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Semicontronic

India . 148 parts In-Stock

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$57.050

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$55.624

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$55.338

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One Stop Electronics

USA . 518 parts In-Stock

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$63.050

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Corohmni

South Africa . 349 parts In-Stock

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Corphita

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Overview

Unlock the power of advanced technology with the A5T3571 by Texas Instruments. This high-quality RF Small Signal Bipolar Junction Transistor offers unparalleled performance in amplifier applications within the ultra-high frequency band. With a single NPN configuration and a maximum power dissipation of 0.5W, this transistor delivers reliability and efficiency. Trust in Texas Instruments' reputation for excellence and elevate your projects to new heights with the A5T3571.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable and long-lasting applications.

Polarity or Channel Type: NPN

NPN type BJTs are commonly used for amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Package Shape: ROUND

The round shape allows for easy mounting and placement in circular or small spaces, making it versatile for various electronic designs.

Terminal Form: WIRE

Wire terminals offer convenient connectivity and flexibility in circuit connections, enabling easy integration into electronic systems.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for ultra high frequency applications, providing high performance in demanding communication and signal processing systems.

No. of Terminals: 3

The 3 terminals provide essential connections for base, collector, and emitter, enabling proper functionality in amplifier circuits.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels, ensuring reliable operation in various applications.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and space-saving design, suitable for applications with limited space availability.

Minimum DC Current Gain (hFE): 20

A minimum DC current gain of 20 ensures sufficient amplification capabilities, providing stable and consistent performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring reliable operation in harsh environments.

Maximum Collector-Base Capacitance: 0.85 pF

The low collector-base capacitance of 0.85 pF minimizes signal distortion and improves high-frequency performance in amplifier circuits.

Maximum Collector-Emitter Voltage: 15 V

A maximum collector-emitter voltage of 15V allows for safe and reliable operation within specified voltage limits, preventing damage to the transistor.

Transistor Element Material: SILICON

Silicon material ensures high efficiency and reliability in amplification applications, offering superior performance and durability.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, this transistor can handle moderate current levels, making it suitable for various amplifier circuits.

Terminal Position: BOTTOM

The bottom terminal position allows for easy installation and connection in circuit boards, ensuring convenient integration into electronic systems.

Nominal Transition Frequency (fT): 1200 MHz

With a nominal transition frequency of 1200MHz, this transistor offers high-speed performance and is ideal for ultra high frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) A5T3571 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

A5T3571 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-264-8958, 5961012648958

NIIN

012648958

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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