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MPSA10RLRAG

Onsemi

MPSA10RLRAG by Onsemi

MPSA10RLRAG by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 25V and transition frequency of 650MHz. Ideal for ultra-high frequency applications due to its low capacitance and high frequency band capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,571 parts In-Stock

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Vyrian

USA . 694 parts In-Stock

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694

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Problanco Electronics

Mexico . 7,796 parts In-Stock

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7,796

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SupplyDigital Components

Austria . 7,300 parts In-Stock

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TANS Electronics

Latvia . 6,720 parts In-Stock

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Corphita

USA . 2,264 parts In-Stock

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UHIMA Technologies

Türkiye . 481 parts In-Stock

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481

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Kulean Microsystems

USA . 478 parts In-Stock

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Corohmni

South Africa . 167 parts In-Stock

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Overview

Unleash the power of innovation with the MPSA10RLRAG by Onsemi, a top-tier manufacturer known for cutting-edge technology. This RF Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in ultra-high frequency applications. With a single configuration and a sturdy plastic/epoxy package, this NPN transistor is designed to exceed expectations. Elevate your projects with the value and reliability that only Onsemi can deliver. Experience seamless integration and exceptional results with the MPSA10RLRAG - the ultimate choice for your next groundbreaking endeavor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and integration.

Package Shape: ROUND

Enables easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Allows for secure and stable connections in circuit boards.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-speed and high-frequency applications.

No. of Terminals: 3

Provides necessary connections for the transistor to function effectively.

Package Style (Meter): CYLINDRICAL

Compact and efficient package style for space-constrained applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, allowing for use in various environments.

Maximum Collector-Base Capacitance: 0.7 pF

Low capacitance helps in reducing signal distortion and maintaining signal integrity.

Maximum Collector-Emitter Voltage: 25 V

Can handle relatively high voltages, making it suitable for various voltage requirements.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and performance.

Terminal Finish: MATTE TIN

Provides corrosion resistance and ensures good conductivity.

Terminal Position: BOTTOM

Facilitates easy soldering and connection in circuit boards.

Nominal Transition Frequency (fT): 650 MHz

High transition frequency allows for fast switching and amplification of high-frequency signals.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPSA10RLRAG attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA10RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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