Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NXP Semiconductors' BFR520T/R is a NPN RF BJT transistor with 3 terminals. It operates in L Band, with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle a max collector current of 0.07 A.
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The plastic/epoxy material used in the package body provides durability and protection for the transistor, making it suitable for various applications.
The NPN configuration allows for amplification of signals, making this transistor ideal for amplifier applications.
The single configuration simplifies the setup and usage of the transistor, making it user-friendly.
Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.
The surface mount capability enables easy installation on circuit boards, saving space and simplifying assembly.
Suitable for use in the L band frequency range, making it a versatile choice for a wide range of RF applications.
With 3 terminals, this transistor offers flexibility in connectivity and circuit design.
With a maximum power dissipation of 0.3 W, this transistor can handle power effectively without overheating.
The small outline package style saves space on the circuit board, ideal for compact electronic devices.
The minimum DC current gain ensures stable and reliable amplification of signals.
With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, suitable for various environments.
Silicon material ensures high performance and reliability of the transistor in various applications.
The maximum collector current rating of 0.07 A allows for efficient current handling, essential for amplifier applications.
The tin terminal finish provides excellent connectivity and solderability for easy installation.
With dual terminal positions, this transistor offers flexibility in circuit design and connectivity.
With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes.
Compliance with the CECC standard ensures high quality and reliability of the transistor.
With a nominal transition frequency of 9000 MHz, this transistor offers fast switching speeds and high-frequency performance.
RF Small Signal Bipolar Junction Transistors (BJT) BFR520T/R attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Power Dissipation (Abs):
Qualification:
Reference Standard:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFR520T/R Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00.75
SB
8541.21.00.80
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
FDLL4148
National Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
STM32H743BIT6
STMicroelectronics
STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.
Toshiba
STM32F405RGT6
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SBAV99LT1G
Onsemi
SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.
CC0603KRX7R9BB104
Yageo
Yageo's CC0603KRX7R9BB104 is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. With X7R temperature characteristics, it operates b/w -55 to 125°C. Ideal for surface mount applications in electronics due to its compact size of 1.6mm x 0.8mm x 0.8mm and wraparound terminals.
2N7002
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
2N7002-7-F
Diodes Incorporated
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
LM2931AZ-5.0RPG
LM2931AZ-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage and 0.1A max output current. It features a low dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature range from -40 to 125°C. The package style is cylindrical with matte tin terminal finish, ideal for various electronic devices needing precise voltage regulation.
Bytesonic Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
First Components International
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;
BAV99
Won-top Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Frontier Electronics
2N2222A
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
M39029/58-360
Amphenol
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
M85049/85-08W02
TE Connectivity
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Wire Gauge (AWG): 0; Maximum Wire Size: 0 AWG; Maximum Operating Temperature: 175 Cel; Material: ALUMINUM ALLOY;
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N3570
Texas Instruments
2N3570 by Texas Instruments is a NPN BJT transistor with 4 terminals, 0.05A IC, and 1500MHz fT. Ideal for amplifier applications in the ultra high frequency band, it has a max operating temperature of 175°C and 0.2W power dissipation.
934067699215
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;
MMBTH10RG
MMBTH10RG by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and a transition frequency of 450MHz. It is ideal for amplifier applications in the ultra-high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly. With a DC current gain of at least 50 and a max power dissipation of 0.225W, this transistor operates efficiently at temperatures up to 150°C.
2SC4399-3
RF Small Signal Bipolar Transistors;
BF224RLRM
BF224RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 30V and max operating temp of 150 °C. It operates in the very high frequency band at 850MHz, making it ideal for applications requiring high-speed signal amplification in electronic circuits.
MPSH17
The Onsemi MPSH17 is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pdiss of 0.625W, ideal for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.
MMBTH24LT1
MMBTH24LT1 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance of 0.45pF.
SD1416
NPN; Surface Mount: NO; Transistor Element Material: SILICON;
MMBT5179
MMBT5179 by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.4V and min Gp of 15dB, ideal for amplifier applications in the ultra-high frequency band. This single configuration transistor has a small outline package style, operates up to 150°C, and features a transition frequency of 900MHz.
KST10MTF
KST10MTF by Onsemi is an NPN RF BJT with a max power dissipation of 0.35W and fT of 650MHz. Ideal for UHF applications, it has a max VCE of 25V and hFE of 60, making it suitable for high-frequency amplification in compact designs. With a small outline package and gull wing terminals, it offers efficient surface-mount integration.
MPS918RLRE
MPS918RLRE by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates in the ultra-high frequency band and has a max collector-emitter voltage of 15V. Ideal for amplifier applications, it features a plastic/epoxy package body and can handle up to 0.05A collector current at 150 °C.
2N917
2N917 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and max collector-base capacitance of 1.7pF. Ideal for ultra-high frequency band applications, this single configuration transistor in a cylindrical package is commonly used as an amplifier in electronic circuits.
CPH6021-TL-H
CPH6021-TL-H by Onsemi is an NPN RF BJT with a max power dissipation of 0.7W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations.
NE662M04-T2-A
Nec Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON;
BFU550XVL
The NXP Semiconductors BFU550XVL is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies up to 11GHz. It features a max collector-emitter voltage of 12V, collector current of 0.05A, and a transition frequency of 11GHz. This surface-mount transistor comes in a small outline package with Gull Wing terminals.
BFR93AW
Vishay Telefunken
RF Small Signal Bipolar Transistors; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;
2SC5490A-TL-H
RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;
BFR182E6327HTSA1
Infineon Technologies
BFR182E6327HTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 8000 MHz. It is designed for ultra-high frequency band applications, featuring a small outline package style and Gull Wing terminals. Ideal for amplifier circuits operating at temperatures up to 150°C.
934055891115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Transistor Element Material: SILICON;
MPSH11RL
MPSH11RL by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp. tolerance (150 °C). The transistor, in a cylindrical package, has 3 terminals and silicon element material for optimal performance.
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BFR520
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 15 V;
The NXP Semiconductors BFR520 is a RF Small Signal BJT transistor with NPN polarity, ideal for amplifier applications. It has a max power dissipation of 0.3W, operates in L Band frequency up to 9000MHz, and can handle a max collector current of 0.07A.
BFR520T,115
BFR520T,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier transistor that operates in the L Band frequency range up to 9000 MHz. With a max power dissipation of 0.3 W and a max operating temperature of 150°C, it is suitable for various applications requiring high-frequency amplification.
BFR520,215
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;
BFR520T
BFR520TT/R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; No. of Terminals: 3;
BFR520TRL13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Package Style (Meter): SMALL OUTLINE;
BFR521
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Package Body Material: PLASTIC/EPOXY;
BFR53
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;
BFR505,215
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;
BFR505T/R
BFR53-T
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
BFR505TT/R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Additional Features: HIGH RELIABILITY, LOW NOISE;
BFR505T,115
BFR505TRL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; No. of Elements: 1;
BFR505
BFR505T
BFR505TRL13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Highest Frequency Band: L BAND;
BFR520TRL
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; JESD-609 Code: e3;
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