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BFR520T/R

NXP Semiconductors

BFR520T/R by NXP Semiconductors

NXP Semiconductors' BFR520T/R is a NPN RF BJT transistor with 3 terminals. It operates in L Band, with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle a max collector current of 0.07 A.

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6

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1k+

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VNN

France . 11,266 parts In-Stock

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Anansix

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Vyrian

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Nova Conductors

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Digiode

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Prism Electronics

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Corohmni

South Africa . 42 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,668 parts In-Stock

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AZTECH Wire

Italy . 811 parts In-Stock

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One Stop Electronics

USA . 968 parts In-Stock

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Ampacity Inc.

Singapore . 942 parts In-Stock

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Semicontronic

India . 244 parts In-Stock

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Spain . 9,000 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Unlock the potential of your RF applications with the BFR520T/R from NXP Semiconductors. This high-quality RF Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability, making it the perfect choice for amplifiers in the L Band frequency range. With its innovative design and advanced technology, this NPN transistor provides exceptional value and benefits to customers seeking top-notch solutions for their electronic projects. Experience the difference with the BFR520T/R and take your RF designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for amplification of signals, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the setup and usage of the transistor, making it user-friendly.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

The surface mount capability enables easy installation on circuit boards, saving space and simplifying assembly.

Highest Frequency Band: L BAND

Suitable for use in the L band frequency range, making it a versatile choice for a wide range of RF applications.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in connectivity and circuit design.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle power effectively without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain ensures stable and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, suitable for various environments.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor in various applications.

Maximum Collector Current (IC): 0.07 A

The maximum collector current rating of 0.07 A allows for efficient current handling, essential for amplifier applications.

Terminal Finish: TIN

The tin terminal finish provides excellent connectivity and solderability for easy installation.

Terminal Position: DUAL

With dual terminal positions, this transistor offers flexibility in circuit design and connectivity.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand high-temperature soldering processes.

Reference Standard: CECC

Compliance with the CECC standard ensures high quality and reliability of the transistor.

Nominal Transition Frequency (fT): 9000 MHz

With a nominal transition frequency of 9000 MHz, this transistor offers fast switching speeds and high-frequency performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR520T/R attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

CECC

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR520T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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