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BFR520T

NXP Semiconductors

BFR520T by NXP Semiconductors

The NXP Semiconductors BFR520T is a RF Small Signal BJT transistor with NPN polarity, suitable for amplifier applications. It operates in the L Band frequency range up to 9000 MHz, with a max power dissipation of 0.3W and a min DC current gain of 60.

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Chip Stock

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Digiode

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Anansix

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ComSIT Distribution GmbH

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Vyrian

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GES GmbH

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Nova Conductors

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AZTECH Wire

Italy . 340 parts In-Stock

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Ampacity Inc.

Singapore . 980 parts In-Stock

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Semicontronic

India . 1,132 parts In-Stock

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One Stop Electronics

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Continental Prestige Electronics

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Overview

Discover the power and precision of the BFR520T by NXP Semiconductors, a top-of-the-line RF small signal bipolar junction transistor. With a focus on quality and innovation, NXP delivers cutting-edge technology to amplify signals with ease. Ideal for applications in the L band, this transistor offers superior performance and reliability. Unlock new possibilities in amplifier design and signal processing with the BFR520T, a game-changer in the world of electronics. Elevate your projects and stay ahead of the curve with NXP Semiconductors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making the product suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and signal processing circuits, making this product versatile for such applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape provides efficient use of space and facilitates placement in tight spaces.

Highest Frequency Band: L BAND

Suitable for high-frequency applications in the L band, providing reliable performance in such frequency ranges.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle relatively high power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for compact designs.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making them a popular choice for electronic applications.

Maximum Collector Current (IC): 0.07 A

The maximum collector current rating indicates the current-carrying capacity of the transistor, ensuring reliable operation under specified conditions.

Terminal Finish: TIN

Tin terminal finish provides good electrical conductivity and solderability, ensuring reliable connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and easy connectivity to external components.

Maximum Time At Peak Reflow Temperature (s): 30

With a short maximum time at peak reflow temperature, this transistor can withstand reflow soldering processes without damage.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures that the transistor can undergo solder reflow processes without degradation.

Nominal Transition Frequency (fT): 9000 MHz

With a high nominal transition frequency, this transistor is suitable for high-frequency signal processing applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFR520T attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY, LOW NOISE

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFR520T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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