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BLF871

NXP Semiconductors

BLF871 by NXP Semiconductors

NXP Semiconductors' BLF871 is an NPN RF BJT transistor with a ceramic-metal-sealed co-fired package. It operates in the ultra-high frequency band, suitable for amplifier applications. With a max operating temperature of 200°C and low collector-base capacitance of 1pF, it offers high performance in a flange mount package.

Median Price

$110.752

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Nova Conductors

Japan . 96 parts In-Stock

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VNN

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Vyrian

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Digiode

USA . 2,539 parts In-Stock

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Anansix

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AZTECH Wire

Italy . 780 parts In-Stock

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One Stop Electronics

USA . 989 parts In-Stock

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$27.050

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Ampacity Inc.

Singapore . 1,452 parts In-Stock

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Continental Prestige Electronics

USA . 6,352 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$102.999

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Lixinc

USA . 7,843 parts In-Stock

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UNI Independent Distributors

Spain . 7,023 parts In-Stock

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Perfect Parts

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Argo Parts USA

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Overview

Elevate your RF amplifier performance with the BLF871 from NXP Semiconductors. Designed with precision and excellence, this transistor offers unparalleled reliability and efficiency for a wide range of applications in the ultra-high frequency band. Whether you're looking to enhance your communication systems or optimize your signal processing, the BLF871 delivers unmatched quality and value that will take your projects to the next level. Trust NXP Semiconductors to provide top-of-the-line solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability, making the transistor suitable for a wide range of applications and environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes the transistor easy to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers excellent performance and reliability in amplification circuits.

Surface Mount: YES

The surface mount capability allows for easy PCB assembly, saving time and effort during the manufacturing process.

Package Shape: RECTANGULAR

The rectangular shape of the package provides efficient use of space on the PCB and allows for compact designs.

Terminal Form: FLAT

The flat terminal form ensures secure connections and ease of soldering during installation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

This transistor is optimized for ultra high frequency applications, providing excellent performance in high-speed circuits.

No. of Terminals: 2

The 2 terminals simplify the connection process and make the transistor easy to integrate into various electronic designs.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for easy and secure mounting of the transistor, ensuring stability in electronic systems.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Base Capacitance: 1 pF

Low collector-base capacitance ensures minimal interference and distortion in amplification circuits, leading to high-quality audio output.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its excellent electrical properties, ensuring high performance and reliability.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit design and allows for easy connections to other components in the system.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BLF871 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector-Base Capacitance:

1 pF

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F2

Moisture Sensitivity Level (MSL):

NOT APPLICABLE

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLF871 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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