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MSC3130T1

Onsemi

MSC3130T1 by Onsemi

MSC3130T1 by Onsemi is a NPN BJT transistor for amplifier applications. It operates in the ultra high frequency band with fT of 1400 MHz. With a max power dissipation of 0.2W and max operating temp of 150 °C, it's ideal for small outline packages requiring high-speed performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,315 parts In-Stock

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Vyrian

USA . 2,215 parts In-Stock

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2,215

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Kulean Microsystems

USA . 7,735 parts In-Stock

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7,735

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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SupplyDigital Components

Austria . 4,098 parts In-Stock

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Problanco Electronics

Mexico . 2,337 parts In-Stock

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Corphita

USA . 1,767 parts In-Stock

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TANS Electronics

Latvia . 1,525 parts In-Stock

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1,525

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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Corohmni

South Africa . 399 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the MSC3130T1 by Onsemi. As a leader in RF Small Signal Bipolar Junction Transistors, Onsemi ensures top-notch quality and reliability for all its products. The MSC3130T1 is designed for high-performance applications like amplifiers in the ultra-high-frequency band, providing unmatched value and benefits to customers. Experience seamless integration, superior functionality, and exceptional performance with the MSC3130T1 - the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in different projects.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Provides a standard shape for easy integration into various electronic devices and applications.

Terminal Form: GULL WING

Facilitates secure and reliable connections, ensuring stable performance in different operating conditions.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for high-frequency applications, offering reliable performance in demanding RF circuits.

Maximum Power Dissipation: 0.2 W

Withstands high power levels, ensuring reliable operation in amplifier circuits.

Package Style (Meter): SMALL OUTLINE

Compact package design saves space and allows for efficient board layout in electronic devices.

Minimum DC Current Gain (hFE): 75

Provides good amplification capabilities, ensuring efficient signal amplification in amplifier circuits.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, making it suitable for various applications.

Maximum Collector-Emitter Voltage: 10 V

Can handle high voltages, ensuring reliable performance in different circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring long-lasting operation in electronic devices.

Maximum Collector Current (IC): 0.05 A

Capable of handling moderate current levels, making it suitable for various amplifier applications.

Terminal Finish: TIN LEAD

Provides good contact and solderability, ensuring reliable connections in circuit assembly.

Terminal Position: DUAL

Allows for flexible mounting and connection options, supporting various circuit layouts.

Peak Reflow Temperature: 235

Can withstand high temperatures during assembly processes, ensuring reliable solder joints.

Nominal Transition Frequency (fT): 1400 MHz

High transition frequency enables high-speed signal processing, making it suitable for RF and amplifier applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MSC3130T1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Minimum DC Current Gain (hFE):

75

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSC3130T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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