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LM3046MX

Texas Instruments

LM3046MX by Texas Instruments

LM3046MX by Texas Instruments is an NPN BJT with 5 elements, suitable for amplifier applications in the VHF band. It has a max fT of 550 MHz, hFE of 40, and can handle up to 0.05 A collector current. The package is a small outline with Gull Wing terminals and can dissipate 0.75 W at 85°C.

Median Price

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Lifecycle Status

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8

In-Stock Inventory

1k+

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Chip Stock

USA . 6,880 parts In-Stock

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Vyrian

USA . 5,073 parts In-Stock

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Digiode

USA . 2,854 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Anansix

USA . 412 parts In-Stock

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Electronics Depot

USA . 140 parts In-Stock

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Bristol Electronics

USA . 85 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 17 parts In-Stock

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Parana Technologies

USA . 1,218 parts In-Stock

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$0.269

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$1.532

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$0.269

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$1.532

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DigiPath Technology Company

USA . 1,429 parts In-Stock

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$0.296

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$0.272

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ChromeModa Solutions

Germany . 6,005 parts In-Stock

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$0.302

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$0.248

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IDEA Electronic Components Group

UK . 731 parts In-Stock

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$0.302

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$0.272

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Corohmni

South Africa . 299 parts In-Stock

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$0.414

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Semicontronic

India . 577 parts In-Stock

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$4.050

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$3.949

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$3.928

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AZTECH Wire

Italy . 836 parts In-Stock

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$13.879

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One Stop Electronics

USA . 233 parts In-Stock

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$52.050

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Ampacity Inc.

Singapore . 647 parts In-Stock

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$65.050

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Continental Prestige Electronics

USA . 3,986 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,839 parts In-Stock

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Argo Parts USA

USA . 3,146 parts In-Stock

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Corphita

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Kepictronics

USA . 348 parts In-Stock

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Bastille Electronics

Australia . 42 parts In-Stock

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Perfect Parts

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Overview

Elevate your RF signal amplifier game with the LM3046MX by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments guarantees top-notch quality and reliability in every product they produce. This NPN transistor boasts a very high frequency band, making it perfect for a wide range of applications. With a small outline package and gull wing terminals, this transistor offers easy surface mount installation. Say goodbye to signal loss and hello to amplified performance with the LM3046MX.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and cost-effective housing for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for various applications.

Configuration: COMPLEX

Allows for advanced signal processing capabilities and improved performance.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring reliable and high-quality signal processing.

Surface Mount: YES

Can be easily mounted on circuit boards, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Offers a standard form factor for easy integration into circuit designs.

Terminal Form: GULL WING

Enhances soldering reliability and mechanical stability during assembly.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring high frequency operation and quick signal processing.

Maximum Power Dissipation (Abs): 0.75 W

Supports efficient power handling to prevent overheating and ensure the transistor's longevity.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications.

Minimum DC Current Gain (hFE): 40

Ensures reliable and consistent amplification performance.

Maximum Operating Temperature: 85 °C

Operates effectively within a wide range of temperatures, enhancing product reliability.

Maximum Collector-Emitter Voltage: 15 V

Provides ample voltage handling capability for various circuit requirements.

Transistor Element Material: SILICON

Highly common and reliable material for transistor construction.

Maximum Collector Current (IC): 0.05 A

Optimal current rating for amplification tasks, ensuring stable operation.

Terminal Finish: TIN LEAD

Enhances solderability and electrical conductivity for reliable connections.

Terminal Position: DUAL

Facilitates efficient and secure connection within circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 20

Ensures controlled and consistent soldering during assembly processes.

Peak Reflow Temperature °C: 235

Supports high-temperature soldering for robust joint formation.

Nominal Transition Frequency (fT): 550 MHz

Enables high-frequency signal processing, suitable for demanding applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) LM3046MX attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

5

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

LM3046MX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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