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LM3046M

Texas Instruments

LM3046M by Texas Instruments

LM3046M by Texas Instruments is an NPN BJT with 5 elements and 14 terminals. It operates in the very high frequency band at 550 MHz, ideal for amplifier applications. With a max collector-emitter voltage of 15V and max collector current of 0.05A, it's suitable for small outline packages in RF circuits.

Median Price

$1.960

Lifecycle Status

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20

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Forefront Electronics and Design

USA . 2 parts In-Stock

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Vyrian

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Prism Electronics

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Electronics Depot

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Speed Components Ltd

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LIBRA Elektronik GmbH

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Manoshevitz Elec. Sales

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Semtec, LLC

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ComSIT Distribution GmbH

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Connector Distribution Corp

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Right Parts Inc.

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R&J Components

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Fibra_Brandt Electronic GMBH

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Distributors (Availability)

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Parana Technologies

USA . 148 parts In-Stock

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$0.674

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$1.721

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$1.721

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DigiPath Technology Company

USA . 1,972 parts In-Stock

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$0.742

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$0.683

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$0.742

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ChromeModa Solutions

Germany . 2,606 parts In-Stock

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$0.757

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$0.621

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$0.757

$0.621

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IDEA Electronic Components Group

UK . 2,220 parts In-Stock

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$0.757

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$0.681

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$0.757

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Corohmni

South Africa . 476 parts In-Stock

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$1.765

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AZTECH Wire

Italy . 34 parts In-Stock

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$19.532

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Semicontronic

India . 794 parts In-Stock

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$21.050

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$20.524

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One Stop Electronics

USA . 605 parts In-Stock

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$24.050

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Ampacity Inc.

Singapore . 1,038 parts In-Stock

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$34.050

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Component Stockers USA

USA . 271 parts In-Stock

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$99.990

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Authorized Procurement Solutions

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Bastille Electronics

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Argo Parts USA

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Cyclops Electronics Ltd (Excess)

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Overview

Discover the LM3046M by Texas Instruments, a top-quality RF Small Signal Bipolar Junction Transistor that offers exceptional performance in amplifier applications. With a complex configuration and NPN polarity, this transistor is designed for very high frequency bands, ensuring optimal signal amplification. Its compact small outline package and gull wing terminals make it ideal for surface mount applications. Trust Texas Instruments for reliable, high-performance components that deliver value and benefits to your projects. Experience the difference with the LM3046M.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for versatile use in amplifier circuits, making this transistor suitable for a wide range of applications.

Configuration: COMPLEX

The complex configuration of this transistor enables it to perform well in demanding amplifier applications, providing high performance and reliability.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, this transistor ensures high-quality signal amplification and low noise levels.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted onto circuit boards, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with standard mounting techniques, making it easy to integrate into existing systems.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, ensuring stable performance in various operating conditions.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

The very high frequency band capability allows for high-speed signal processing, making this transistor ideal for applications requiring fast response times.

No. of Elements: 5

With five elements, this transistor offers increased functionality and versatility for complex circuit designs.

No. of Terminals: 14

The 14 terminals provide ample connection options, allowing for flexibility in circuit layout and design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making this transistor ideal for compact electronics applications.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor provides reliable amplification and signal processing capabilities.

Maximum Operating Temperature: 85 °C

The maximum operating temperature of 85°C ensures stable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 15 V

The maximum collector-emitter voltage of 15 volts allows for safe and reliable operation in various voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and durability, making it a reliable choice for long-term use.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05 amps, this transistor can handle moderate power levels in amplifier circuits.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers excellent solderability and corrosion resistance, ensuring long-term reliability in harsh operating conditions.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layout and design, allowing for easy integration into complex systems.

Maximum Time At Peak Reflow Temperature (s): 20

The 20-second maximum time at peak reflow temperature ensures reliable soldering and assembly of the transistor onto circuit boards.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235°C, this transistor can withstand high-temperature soldering processes without damage.

Nominal Transition Frequency (fT): 550 MHz

With a nominal transition frequency of 550 megahertz, this transistor offers high-speed signal processing capabilities, making it suitable for applications requiring fast response times.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) LM3046M attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

40

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

5

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

LM3046M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-645-8914, 5961016458914

NIIN

016458914

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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