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MMBTH81LT1

Onsemi

MMBTH81LT1 by Onsemi

MMBTH81LT1 by Onsemi is a PNP RF small signal BJT with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is commonly used in applications requiring ultra high frequency band performance, such as wireless communication systems.

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16

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1k+

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Voyager Components

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Bristol Electronics

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A2Z Electronics, Inc.

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Diverse Electronics

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R&J Components

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Inventory MP

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Atlantic Semiconductor

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ACDS - Activité Composants Distribution Service

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Digiode

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EMSNET

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Vyrian

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Electronic Expediters

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Resion

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Prism Electronics

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Nova Conductors

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.652

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$0.619

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Corohmni

South Africa . 109 parts In-Stock

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Aztec Data Supply Inc.

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AZTECH Wire

Italy . 713 parts In-Stock

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Ampacity Inc.

Singapore . 286 parts In-Stock

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Metaverse IC Inc.

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Overview

Discover the power of the MMBTH81LT1 by Onsemi, a high-quality RF Small Signal Bipolar Junction Transistor (BJT) that brings exceptional performance to your electronic projects. With its single configuration and ultra-high frequency band capabilities, this transistor is perfect for applications that require top-level precision and speed. Manufactured by Onsemi, a trusted name in the industry, you can rely on their expertise and commitment to excellence. The MMBTH81LT1 offers incredible value, benefits, and advantages to customers, allowing you to unlock endless possibilities in your designs. Upgrade your electronics with the MMBTH81LT1 today and experience the difference it makes!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made with a plastic/epoxy package body material, which helps to protect the transistor and ensure its durability and reliability over time, making it a good choice for long-term use.

Polarity or Channel Type: PNP

Being a PNP transistor, this product is suitable for applications that require PNP polarity or channel type, making it a versatile choice for various circuit designs.

Configuration: SINGLE

With a single configuration, this transistor simplifies circuit design and integration, making it easier to incorporate into different electronic systems or projects.

Surface Mount: YES

This transistor is surface mount compatible, allowing for easier and more efficient installation on printed circuit boards, making it a convenient option for PCB designs.

Package Shape: RECTANGULAR

Featuring a rectangular package shape, this transistor facilitates easier placement and mounting on PCBs, enabling optimal space utilization and efficient circuit layouts.

Terminal Form: GULL WING

The gull wing terminal form of this transistor ensures reliable electrical connections and reduces the risk of solder joint failure, enhancing its overall performance and longevity.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Designed for the ultra-high frequency band, this transistor offers excellent performance in high-frequency applications, making it ideal for demanding RF circuit designs.

No. of Elements: 1

With a single element, this transistor is straightforward to integrate into various circuit configurations, simplifying circuit design and reducing complexity.

No. of Terminals: 3

Having three terminals, this transistor provides the necessary connections for proper electrical functionality, allowing for easy integration into different circuit layouts.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this transistor allows for space-saving and compact designs, making it suitable for applications with limited board space or size constraints.

Maximum Collector-Base Capacitance: 0.85 pF

With a maximum collector-base capacitance of 0.85 pF, this transistor exhibits low capacitance characteristics, ensuring efficient signal processing and minimizing unwanted effects in high-frequency applications.

Maximum Collector-Emitter Voltage: 20 V

With a maximum collector-emitter voltage of 20 V, this transistor can handle moderate voltage levels, making it suitable for a wide range of electronic applications.

Transistor Element Material: SILICON

Constructed with silicon transistor element material, this product offers excellent stability, reliability, and performance, making it a reliable choice for various electronic circuits.

Terminal Position: DUAL

Featuring dual terminal positions, this transistor provides flexible connectivity options, allowing for easy integration into different circuit configurations or systems.

Nominal Transition Frequency (fT): 600 MHz

With a high nominal transition frequency of 600 MHz, this transistor enables efficient signal processing and amplification in high-frequency applications, making it a desirable choice for RF circuit designs.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MMBTH81LT1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.85 pF

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTH81LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-427-7960, 5961014277960

NIIN

014277960

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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