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PBR951,215

NXP Semiconductors

PBR951,215 by NXP Semiconductors

NXP Semiconductors PBR951,215 is a NPN RF BJT transistor with 3 terminals. It operates in the ultra-high frequency band up to 8 GHz and has a max power dissipation of 0.365 W. Ideal for amplifier applications, it can handle a max collector-emitter voltage of 10V at an operating temp of 175°C.

Median Price

$0.052

Lifecycle Status

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6

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1k+

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Chip1Stop

Japan . 20 parts In-Stock

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Vyrian

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Digiode

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Anansix

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Prism Electronics

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Nova Conductors

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Aztec Data Supply Inc.

USA . 2,028 parts In-Stock

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$0.376

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Corohmni

South Africa . 63 parts In-Stock

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$1.246

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$1.502

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$1.367

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One Stop Electronics

USA . 751 parts In-Stock

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AZTECH Wire

Italy . 451 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Argo Parts USA

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Overview

Elevate your RF signal amplification with the NXP Semiconductors PBR951,215. Designed with precision and expertise, this NPN transistor offers unparalleled performance in the ultra-high frequency band, making it ideal for a wide range of amplifier applications. With a small outline package and gull wing terminals, this transistor is easy to integrate into any project. Experience superior quality and reliability with NXP Semiconductors, and unlock the full potential of your RF signal processing needs. Upgrade to the PBR951,215 today and amplify your success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

With NPN configuration, this transistor allows for easy integration into many amplifier circuits, offering versatile functionality.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making this transistor an efficient choice for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides optimal performance and quality in amplifying signals.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on circuit boards, saving space and enabling compact designs.

Package Shape: RECTANGULAR

The rectangular shape of the package offers compatibility with standard circuit board layouts, enhancing ease of integration into existing designs.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and soldering points, ensuring reliable electrical connections for the transistor.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra-high frequency band, this transistor is ideal for high-speed signal processing applications.

No. of Terminals: 3

With three terminals, this transistor offers straightforward connections and easy integration into circuits, simplifying the overall design process.

Maximum Power Dissipation (Abs): 0.365 W

This high power dissipation rating ensures the transistor can handle heavy loads and operate efficiently under various conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for dense circuit board layouts, making this transistor suitable for compact designs.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 indicates good amplification capabilities, ensuring reliable signal amplification in applications.

Maximum Operating Temperature: 175 °C

With a high operating temperature range of 175°C, this transistor can withstand harsh environments and operate reliably in extreme conditions.

Maximum Collector-Emitter Voltage: 10 V

The maximum collector-emitter voltage of 10V allows for safe operation in a wide range of voltage levels, adding versatility to the transistor's applications.

Transistor Element Material: SILICON

Silicon is a reliable and widely-used material for transistors, offering good performance and durability for long-term usage.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is capable of handling moderate current loads and operating efficiently in various applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability and conductivity, ensuring secure connections and reliable performance for the transistor.

Terminal Position: DUAL

The dual terminal position offers flexibility in connection options, allowing for various circuit configurations and enhancing compatibility in different layouts.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, making it suitable for solder reflow processes without compromising performance.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can be safely and effectively soldered during manufacturing processes, ensuring reliable connections.

Nominal Transition Frequency (fT): 8000 MHz

The high nominal transition frequency of 8000 MHz indicates fast signal processing capabilities, making this transistor ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) PBR951,215 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBR951,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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