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MCH4016-TL-H

Onsemi

MCH4016-TL-H by Onsemi

MCH4016-TL-H by Onsemi is a NPN RF BJT transistor with 4 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.35W, hFE of 60, and fT of 10GHz. This small outline package with flat terminals operates up to 150°C and supports a max collector-emitter voltage of 12V.

Median Price

$0.155

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 174,000 parts In-Stock

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-

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$0.168

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$0.140

10k+ parts

$0.124

174,000

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$0.168

$0.140

$0.124

Farnell

UK . 174,000 parts In-Stock

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$0.165

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$0.165

DigiKey

USA . 108,000 parts In-Stock

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$0.110

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$0.110

Flip Electronics (Authorized)

USA . 108,000 parts In-Stock

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Verical

USA . 87,000 parts In-Stock

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$0.155

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Mouser Electronics

USA . 830 parts In-Stock

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$0.124

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$0.124

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Vyrian

USA . 2,489 parts In-Stock

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$0.110

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$0.110

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Digiode

USA . 2,491 parts In-Stock

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$0.131

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$0.131

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Flip Electronics

USA . 108,000 parts In-Stock

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108,000

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Distributors (Availability)

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Corohmni

South Africa . 497 parts In-Stock

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$0.110

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497

$0.110

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Corphita

USA . 2,093 parts In-Stock

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$0.124

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Continental Prestige Electronics

USA . 174,000 parts In-Stock

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$0.128

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Problanco Electronics

Mexico . 7,915 parts In-Stock

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Kepictronics

USA . 7,121 parts In-Stock

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TANS Electronics

Latvia . 6,667 parts In-Stock

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Kulean Microsystems

USA . 5,044 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 443 parts In-Stock

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SupplyDigital Components

Austria . 368 parts In-Stock

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Overview

Upgrade your RF amplifier systems with the MCH4016-TL-H by Onsemi. Designed with precision and quality, Onsemi delivers top-of-the-line RF Small Signal Bipolar Junction Transistors for ultra high frequency applications. This NPN transistor offers a single configuration in a convenient small outline package, making it perfect for surface mount installations. With a maximum power dissipation of 0.35W and a nominal transition frequency of 10,000 MHz, this transistor provides unmatched performance and reliability. Enhance your signal amplification capabilities and take your projects to the next level with the MCH4016-TL-H from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification purposes, making this transistor suitable for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and assembly, making it easy to incorporate this transistor into various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and convenient integration into PCBs, saving space and simplifying assembly.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of operating in the ultra high frequency band, making it suitable for high-frequency applications.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can handle moderate power levels efficiently.

Maximum Collector-Emitter Voltage: 12 V

Can withstand a maximum collector-emitter voltage of 12V, providing a safety margin in various operating conditions.

Maximum Collector Current (IC): 0.03 A

Capable of handling a maximum collector current of 0.03A, suitable for low to moderate current applications.

Nominal Transition Frequency (fT): 10000 MHz

High transition frequency enables high-speed switching and amplification, making this transistor ideal for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MCH4016-TL-H attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.35 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH4016-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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