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MCH4015

Onsemi

MCH4015 by Onsemi

The Onsemi MCH4015 is an NPN RF BJT transistor with a max power dissipation of 0.45W and fT of 10GHz. It is used in X Band applications due to its small outline package, flat terminals, and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,258 parts In-Stock

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Vyrian

USA . 97 parts In-Stock

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Kulean Microsystems

USA . 8,209 parts In-Stock

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TANS Electronics

Latvia . 7,469 parts In-Stock

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SupplyDigital Components

Austria . 6,809 parts In-Stock

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Corphita

USA . 1,453 parts In-Stock

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Problanco Electronics

Mexico . 450 parts In-Stock

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UHIMA Technologies

Türkiye . 223 parts In-Stock

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Corohmni

South Africa . 81 parts In-Stock

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Overview

Discover the power of high-quality RF Small Signal Bipolar Junction Transistors (BJT) with the MCH4015 by Onsemi. With a focus on excellence in manufacturing and a reputation for reliability, this NPN transistor offers a wide range of applications in X Band frequencies. Its small outline package and flat terminal form make it perfect for surface mount configurations, providing customers with superior performance and efficiency. Experience the value and benefits of the MCH4015 for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability while keeping the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

Commonly used type in electronic circuits for amplification and switching applications.

Configuration: SINGLE

Simplifies circuit design and integration.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Facilitates compact and organized PCB layout.

Terminal Form: FLAT

Ensures stable and reliable connection on the PCB.

Highest Frequency Band: X BAND

Suitable for high-frequency applications such as radar systems and microwave communication.

No. of Terminals: 4

Provides necessary connections for proper functionality.

Maximum Power Dissipation (Abs): 0.45 W

Can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and enables high-density designs.

Maximum Power Dissipation Ambient: 0.45 W

Able to dissipate heat efficiently in different operating environments.

Minimum DC Current Gain (hFE): 60

Ensures stable and predictable amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand moderate temperature levels during operation.

Maximum Collector-Emitter Voltage: 12 V

Suitable for low voltage applications.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels.

Terminal Position: DUAL

Allows for easy connectivity in the circuit.

Nominal Transition Frequency (fT): 10000 MHz

Enables high-speed signal processing and amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MCH4015 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.45 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH4015 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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