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MCH4015-TL-H

Onsemi

MCH4015-TL-H by Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

Median Price

$0.127

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,575 parts In-Stock

1+ parts

$0.660

100+ parts

$0.262

1k+ parts

$0.178

10k+ parts

$0.132

2,575

$0.660

$0.262

$0.178

$0.132

Verical

USA . 36,000 parts In-Stock

1+ parts

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$0.113

36,000

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$0.113

Arrow

USA . 3,000 parts In-Stock

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$0.102

3,000

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$0.102

Chip1Stop

Japan . 3,000 parts In-Stock

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$0.141

3,000

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$0.141

Flip Electronics (Authorized)

USA . 2,955 parts In-Stock

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2,955

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Distributors (In-Stock)

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Vyrian

USA . 2,254 parts In-Stock

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$0.102

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$0.102

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Digiode

USA . 675 parts In-Stock

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$0.395

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675

$0.395

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NAC Semi

USA . 6,000 parts In-Stock

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$0.237

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$0.237

Flip Electronics

USA . 2,955 parts In-Stock

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2,955

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Distributors (Availability)

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Corohmni

South Africa . 424 parts In-Stock

1+ parts

$0.109

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424

$0.109

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Continental Prestige Electronics

USA . 7,641 parts In-Stock

1+ parts

$0.270

100+ parts

$0.172

1k+ parts

$0.105

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-

7,641

$0.270

$0.172

$0.105

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Corphita

USA . 2,331 parts In-Stock

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$0.374

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2,331

$0.374

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Component Stockers USA

USA . 5,064 parts In-Stock

1+ parts

$0.390

100+ parts

$0.230

1k+ parts

$0.150

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5,064

$0.390

$0.230

$0.150

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QUARKTWIN TECHNOLOGY LTD

USA . 13,342 parts In-Stock

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13,342

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Kulean Microsystems

USA . 4,646 parts In-Stock

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4,646

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Problanco Electronics

Mexico . 4,235 parts In-Stock

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4,235

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SupplyDigital Components

Austria . 4,121 parts In-Stock

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4,121

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TANS Electronics

Latvia . 3,842 parts In-Stock

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3,842

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UHIMA Technologies

Türkiye . 181 parts In-Stock

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181

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MCH4015-TL-H attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

X BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.45 W

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH4015-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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