Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi MCH4020-TL-H is an NPN RF BJT with a max power dissipation of 0.4W, fT of 13GHz, and hFE of 60. Ideal for high-frequency applications in surface-mount configurations, it operates up to 150°C with a max collector current of 0.15A.
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NPN transistors are commonly used in amplification circuits, making this product suitable for various electronic applications.
Single configuration makes it easy to integrate into circuits and simplifies design requirements.
Surface mount capability allows for easy and efficient PCB assembly, saving time and space.
With a high maximum power dissipation, this transistor can handle higher power applications without overheating.
A minimum DC current gain of 60 ensures stable and reliable amplification performance.
Capable of operating at temperatures up to 150°C, making it suitable for high temperature applications.
Can handle relatively high collector current, making it suitable for applications requiring higher currents.
Tin bismuth terminal finish provides good solderability and reliability during PCB assembly.
Can withstand peak reflow temperatures for a maximum of 30 seconds, ensuring durability during assembly processes.
Peak reflow temperature of 260°C allows for reliable soldering without damaging the transistor.
High nominal transition frequency of 13 GHz enables high-frequency signal amplification applications.
RF Small Signal Bipolar Junction Transistors (BJT) MCH4020-TL-H attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi
Maximum Collector Current (IC):
Configuration:
Minimum DC Current Gain (hFE):
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
Maximum Operating Temperature:
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
Terminal Finish:
Maximum Time At Peak Reflow Temperature (s):
Nominal Transition Frequency (fT):
MCH4020-TL-H Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
STM32H743ZIT6
STMicroelectronics
STM32H743ZIT6 by STMicroelectronics is a 32-bit microcontroller with integrated cache and a max supply voltage of 3.6V. It is commonly used in industrial applications, offering features such as 21 timers, CAN and USB connectivity, and low power mode.
LL4148
Microsemi
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Alpha & Omega Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20Z
Maxim Integrated
DS18B20Z by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring precise temperature monitoring in compact spaces.
1N4148WS
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BAV99-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
L7805CV
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
BAV99
Infinex
LIS3DHTR
LIS3DHTR by STMicroelectronics is a 16-terminal accelerometer with output range of 0.18-1.62V, ideal for motion sensing applications. Operating temperature ranges from -40 to 85°C, making it suitable for various environments. With a compact square package body of 3x3mm and digital voltage output type, it is commonly used in surface mount designs.
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
International Semiconductor
1N4148WT
Onsemi
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
NDT2955
NDT2955 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 15A and EAS of 174mJ, suitable for ENHANCEMENT MODE operation. With a compact SMALL OUTLINE package and -55 to 150 °C operating range, it offers efficient power dissipation up to 3W.
FDLL4148
Diodes Incorporated
CL31B104KBCNNNC
Samsung Electro-mechanics
Samsung Electro-mechanics CL31B104KBCNNNC is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It features X7R temperature characteristics, -55 to 125 °C operating range, and compact SMT package style. Ideal for applications requiring high reliability in compact electronic devices.
FDD5614P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
MPSH10
Samsung
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
BFT92T/R
NXP Semiconductors
The NXP Semiconductors BFT92T/R is a PNP RF BJT transistor with 3 terminals, ideal for amplifier applications in the UHF band. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. The package is a small outline with gull wing terminals and can operate up to 150°C.
BFR99A
BFR99A by STMicroelectronics is a PNP RF small signal BJT designed for amplifier applications. It features a max power dissipation of 0.36 W, operates at frequencies up to 2300 MHz, and withstands temperatures up to 200 °C. Its cylindrical metal package ensures durability in ultra-high frequency environments.
2SC3838KT146P
ROHM
ROHM 2SC3838KT146P is an NPN BJT transistor with max VCEsat of 0.5V, fT of 3200MHz, and hFE of 82. Ideal for S Band applications, this transistor is a single configuration amplifier in a small outline package suitable for surface mount technology.
BFY90
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;
2N3010
Texas Instruments
2N3010 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 25, and fT of 600MHz. Ideal for switching applications due to its max. collector-emitter voltage of 11V and max. collector current of 0.5A in a cylindrical package with wire terminals.
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;
BFY90PBFREE
Central Semiconductor
BFY90PBFREE by Central Semiconductor is an NPN BJT for AMPLIFIER applications. Features include Gp: 21 dB, fT: 1400 MHz, and hFE: 20. With a max operating temperature of 200°C, it has a package style of CYLINDRICAL and terminal finish of MATTE TIN OVER NICKEL.
MPSH17RLRAG
MPSH17RLRAG by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.625W and fT of 800MHz. Ideal for amplifier applications, it operates in the very high-frequency band with a max collector-emitter voltage of 15V.
BFG425W
NXP Semiconductors' BFG425W is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135 W, hFE of 50, and fT of 25 GHz. The package is small outline with gull wing terminals and can handle up to 4.5 V collector-emitter voltage.
2SC5227A-5-TB-E
Onsemi's 2SC5227A-5-TB-E is an NPN RF BJT with max power dissipation of 0.2W, hFE of 135, and fT of 5000MHz. Ideal for high-frequency applications in electronics due to its small signal capabilities and surface-mount configuration.
NESG260234-T1
Nec Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
2N5109
2N5109 by Texas Instruments is a NPN BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 0.4A, ideal for amplifier applications in the very high frequency band up to 1200MHz. Its package style is cylindrical with a metal body material and wire terminals, featuring a single configuration design.
TIS86
TIS86 by Texas Instruments is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the very high frequency band. It has a max power dissipation of 0.4W, DC current gain of 40, and operates at temperatures up to 150°C. The package style is cylindrical with a round shape and wire terminals.
HFA3127RZ
Integrated Device Technology
NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Minimum DC Current Gain (hFE): 40;
MPSH11
The Onsemi MPSH11 is an NPN RF BJT with a max fT of 650 MHz and hFE of 60. Ideal for UHF applications, it has a VCEO of 25V and Ptot of 1W. Its through-hole package makes it suitable for high-frequency circuit designs.
BFP405FH6327XTSA1
Infineon Technologies
BFP405FH6327XTSA1 by Infineon Technologies is a NPN RF BJT with built-in diode, ideal for amplifier applications in L Band. Featuring 4 terminals, it has a max fT of 25 GHz and VCE of 4.5V. This small outline transistor has a collector current of 0.012A and low capacitance at 0.1pF, meeting AEC-Q101 standards.
KSC1393R
KSC1393R by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 40, and operates in the very high frequency band up to 700 MHz. This transistor has a max collector-emitter voltage of 30V and can handle a max power dissipation of 0.25W at an ambient temperature of 150 °C.
BF240RLRM
BF240RLRM by Onsemi is a NPN BJT transistor with 40V VCEO, 0.025A IC, and 600MHz fT. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance of 0.34pF. Packaged in cylindrical shape with through-hole terminals for easy installation.
55GN01MA-TL-E
The Onsemi 55GN01MA-TL-E is an NPN RF BJT with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 0.4W, min DC current gain of 100, and nominal transition frequency of 3000MHz. Ideal for high-frequency amplification in electronic circuits.
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MCH4009
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .12 W; Maximum Collector Current (IC): .04 A;
MCH4009-TL-H
RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260;
MCH4013-TL-E
RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi);
MCH4014-TL-H
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .03 A;
MCH4015
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
MCH4015-TL-H
MCH4016
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .03 A;
MCH4016-TL-H
MCH4016-TL-H by Onsemi is a NPN RF BJT transistor with 4 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.35W, hFE of 60, and fT of 10GHz. This small outline package with flat terminals operates up to 150°C and supports a max collector-emitter voltage of 12V.
MCH4017
MCH4017-TL-H
MCH4021
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 13000 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .15 A;
MCH4020
Sanyo Electric
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