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START420

STMicroelectronics

START420 by STMicroelectronics

START420 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, operates in the C band, and comes in a compact rectangular package with gull-wing terminals. Ideal for surface mount designs, it supports efficient signal amplification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,561 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,561

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-

-

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Anansix

USA . 2,631 parts In-Stock

1+ parts

-

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-

1k+ parts

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2,631

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Vyrian

USA . 2,473 parts In-Stock

1+ parts

-

100+ parts

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2,473

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,031 parts In-Stock

1+ parts

$1.041

100+ parts

-

1k+ parts

$0.936

10k+ parts

-

2,031

$1.041

-

$0.936

-

MKK Technologies

India . 1,432 parts In-Stock

1+ parts

$1.957

100+ parts

-

1k+ parts

-

10k+ parts

-

1,432

$1.957

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-

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DigiPath Technology Company

USA . 1,432 parts In-Stock

1+ parts

$1.957

100+ parts

-

1k+ parts

-

10k+ parts

-

1,432

$1.957

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Kepictronics

USA . 306,000 parts In-Stock

1+ parts

-

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306,000

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Corphita

USA . 2,858 parts In-Stock

1+ parts

-

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2,858

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-

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Parana Technologies

USA . 96 parts In-Stock

1+ parts

-

100+ parts

$1.244

1k+ parts

-

10k+ parts

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96

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$1.244

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Overview

Unlock the power of innovation with the START420 from STMicroelectronics, a leader in cutting-edge semiconductor technology. This high-quality NPN RF Small Signal BJT amplifier is designed for superior performance in compact applications, delivering exceptional reliability and efficiency. Perfect for communication systems and signal processing, it enhances your designs while ensuring energy-saving benefits. Experience unmatched value and elevate your projects with the trusted excellence of STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resilience, making this product suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are widely used and offer good switching speeds, making this device ideal for amplifier applications.

Configuration: SINGLE

Single configuration allows for straightforward integration into circuits, optimizing space and reducing cost.

Transistor Application: AMPLIFIER

Designed for amplifier applications, ensuring high performance in audio and signal-processing tasks.

Surface Mount: YES

Surface mount capability enables compact designs and automated assembly processes, enhancing production efficiency.

Package Shape: RECTANGULAR

Rectangular package shape provides efficient space utilization on printed circuit boards.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve mechanical stability on the PCB.

Highest Frequency Band: C BAND

C band operation makes this transistor suitable for communication applications, including satellite and radar systems.

No. of Terminals: 4

Four terminals provide flexibility in circuit design, allowing for multiple configurations and connections.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes footprint on PCBs while allowing for good thermal performance.

Maximum Collector-Emitter Voltage: 4.5 V

A maximum collector-emitter voltage of 4.5 V supports low-voltage applications, ideal for battery-operated devices.

Transistor Element Material: SILICON

Silicon provides excellent thermal stability and reliability, ensuring consistent performance across applications.

Maximum Collector Current (IC): 0.04 A

A maximum collector current of 0.04 A allows this transistor to effectively handle small signal amplification tasks.

Terminal Position: DUAL

Dual terminal positioning enhances ease of integration into various circuit layouts with minimal complications.

Case Connection: EMITTER

Emitter case connection simplifies circuit design and improves the efficiency of signal amplification.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START420 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

LOW NOISE

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

C BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

START420 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

6130-15-139-9770, 6130151399770

NIIN

151399770

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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