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START450TR

STMicroelectronics

START450TR by STMicroelectronics

START450TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.45 W, operates up to 150 °C, and supports frequencies up to 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,710 parts In-Stock

1+ parts

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4,710

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Digiode

USA . 1,748 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,748

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Anansix

USA . 1,375 parts In-Stock

1+ parts

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1,375

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Lantek

USA . 998 parts In-Stock

1+ parts

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998

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 165 parts In-Stock

1+ parts

$0.543

100+ parts

-

1k+ parts

$0.489

10k+ parts

-

165

$0.543

-

$0.489

-

MKK Technologies

India . 1,224 parts In-Stock

1+ parts

$1.021

100+ parts

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1,224

$1.021

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DigiPath Technology Company

USA . 1,224 parts In-Stock

1+ parts

$1.021

100+ parts

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1,224

$1.021

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

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20,000

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Corphita

USA . 3,409 parts In-Stock

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3,409

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Parana Technologies

USA . 1,109 parts In-Stock

1+ parts

-

100+ parts

$0.649

1k+ parts

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10k+ parts

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1,109

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$0.649

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GreenTree Electronics

Israel . 998 parts In-Stock

1+ parts

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100+ parts

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998

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Overview

Unlock superior performance with the START450TR from STMicroelectronics, a leader in innovative semiconductor solutions. This NPN RF Small Signal BJT is designed for amplifying applications, delivering exceptional reliability in compact, surface-mount designs. With a robust maximum operating temperature of 150 °C and cutting-edge materials, it ensures long-lasting durability. Elevate your projects with this high-quality transistor, engineered to meet industry demands while enhancing efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good durability and thermal stability, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplifier configurations, enabling efficient current control with common supply designs.

Configuration: SINGLE

A single configuration simplifies integration into circuits and reduces space, which is ideal for compact designs.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is great for signal processing in audio and RF applications.

Surface Mount: YES

Surface mount technology allows for automated assembly and minimized PCB space, enhancing production efficiency.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement on PCBs and optimal layout for efficient signal routing.

Terminal Form: GULL WING

Gull wing terminals provide optimal soldering strength and ease of assembly, promoting reliability and performance.

Highest Frequency Band: L BAND

Operating in the L Band is beneficial for various communication applications, providing good performance in RF circuits.

No. of Terminals: 4

The four terminals support essential connections for efficient operation and circuit integration.

Maximum Power Dissipation (Abs): 0.45 W

With a power dissipation of 0.45W, it efficiently handles moderate power, suitable for many small-signal applications.

Package Style (Meter): SMALL OUTLINE

The small outline package reduces the physical footprint on PCBs, ideal for space-constrained designs.

Maximum Operating Temperature: 150 °C

A high operating temperature limit ensures reliability under thermal stress, expanding its usability in tough environments.

Maximum Collector-Emitter Voltage: 4.5 V

This low maximum voltage is suitable for low-voltage applications, enhancing safety and efficiency.

Transistor Element Material: SILICON

Silicon is a widely used material that ensures reliable performance, availability, and cost-effectiveness.

Maximum Collector Current (IC): 0.1 A

The 0.1 A collector current rating provides ample current capacity for various small-signal applications, enhancing versatility.

Terminal Finish: MATTE TIN

Matte tin finishes reduce oxidation, ensuring good conductivity and improving solderability during assembly.

Terminal Position: DUAL

Dual terminal positions make it easier to design circuit layouts, enabling more straightforward integration and testing.

Case Connection: EMITTER

Emitter connection design helps in achieving better circuit performance and signal stability.

Nominal Transition Frequency (fT): 42000 MHz

A high transition frequency of 42000 MHz indicates rapid response to input signals, making it ideal for RF applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START450TR attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

START450TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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