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START499

STMicroelectronics

START499 by STMicroelectronics

START499 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and a nominal transition frequency of 42 GHz. Its compact rectangular package supports surface mounting with gull-wing terminals. Ideal for ultra-high frequency circuits, it operates at a max collector-emitter voltage of 4.5 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,523 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,523

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Digiode

USA . 2,105 parts In-Stock

1+ parts

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2,105

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Anansix

USA . 1,880 parts In-Stock

1+ parts

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1,880

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,400 parts In-Stock

1+ parts

$0.394

100+ parts

-

1k+ parts

$0.354

10k+ parts

-

1,400

$0.394

-

$0.354

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MKK Technologies

India . 353 parts In-Stock

1+ parts

$0.740

100+ parts

-

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-

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353

$0.740

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DigiPath Technology Company

USA . 353 parts In-Stock

1+ parts

$0.740

100+ parts

-

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353

$0.740

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-

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Parana Technologies

USA . 1,820 parts In-Stock

1+ parts

-

100+ parts

$0.471

1k+ parts

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1,820

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$0.471

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Corphita

USA . 435 parts In-Stock

1+ parts

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435

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Overview

Unlock your design potential with the START499 from STMicroelectronics, a top-tier NPN RF Small Signal BJT that excels in amplifier applications. Crafted with precision and reliability, this versatile component ensures optimal performance in ultra-high frequency settings while its compact design makes integration seamless. Benefit from enhanced efficiency and durability, giving your projects the competitive edge they deserve. Choose quality; choose START499 for superior results!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making this transistor suitable for long-term applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier applications, providing efficient current amplification and versatility in circuit design.

Configuration: SINGLE

Single configuration allows for simplified circuit designs, making it easier to integrate into compact applications.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor is perfect for audio and RF signal applications, enhancing signal quality.

Surface Mount: YES

Surface mount capability allows for compact PCB designs and automated assembly processes, increasing manufacturing efficiency.

Package Shape: RECTANGULAR

The rectangular shape of the package aids in space-efficient design on printed circuit boards.

Terminal Form: GULL WING

Gull wing terminals offer excellent soldering characteristics and provide strong mechanical support, ensuring reliability in connections.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operation in the ultra-high frequency band makes this transistor ideal for high-speed applications, including RF communication and broadcasting.

No. of Terminals: 4

Having four terminals allows for flexible circuit configuration, making it compatible with various designs.

Maximum Power Dissipation (Abs): 0.9 W

With a maximum power dissipation of 0.9W, this transistor can handle substantial power levels, ensuring stable operation in demanding environments.

Package Style (Meter): SMALL OUTLINE

The small outline package style supports compact device designs while maintaining high performance.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 indicates decent amplification, making it effective for various low-power amplifier applications.

Maximum Collector-Emitter Voltage: 4.5 V

This transistor is suitable for low-voltage applications, enhancing safety and preventing circuit damage.

Transistor Element Material: SILICON

Silicon material provides excellent thermal stability and efficiency, ensuring reliable performance in various conditions.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor offers good handling of signal currents, supporting higher power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish enhances solderability and reduces corrosion, improving the longevity and reliability of the product.

Terminal Position: DUAL

Dual terminal position provides an effective layout for circuit designs, allowing for better signal integrity and performance.

Case Connection: EMITTER

Emitter connection is standard for most BJT applications, allowing for straightforward integration into existing circuit designs.

Nominal Transition Frequency (fT): 42000 MHz

A high nominal transition frequency of 42,000 MHz makes this transistor ideal for high-frequency applications, ensuring efficient signal processing.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) START499 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH EFFICIENCY

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

START499 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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