Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MPS5179RLRE by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and low capacitance at 1pF, housed in a cylindrical package suitable for very high-frequency bands.
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Provides durability and protection for the transistor, making it suitable for various applications.
NPN transistors are commonly used in amplification circuits and offer good performance characteristics.
Simplified design with a single transistor, suitable for basic amplifier applications.
Optimized for amplification purposes, providing reliable performance in amplifier circuits.
Compact and space-saving design for easy integration into electronic devices.
Simplifies the soldering process and allows for easy installation on circuit boards.
Suitable for high-frequency applications where reliable signal amplification is required.
Provides the necessary connections for proper functioning in amplifier circuits.
Aesthetic and functional design that fits well with cylindrical electronic components.
Low capacitance ensures minimal signal loss and distortion in amplifier circuits.
Operates within a safe voltage range, suitable for various amplifier applications.
Silicon transistors offer high performance and reliability in electronic circuits.
Can handle current up to 0.05 A, suitable for many small signal applications.
Provides reliable electrical connections and soldering compatibility for easy installation.
Easy to integrate into circuit boards with bottom terminal position for soldering.
High transition frequency ensures efficient signal amplification in high-frequency applications.
RF Small Signal Bipolar Junction Transistors (BJT) MPS5179RLRE attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi
Maximum Collector Current (IC):
Maximum Collector-Base Capacitance:
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
Terminal Form:
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Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
MPS5179RLRE Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM358DT
STMicroelectronics
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
LL4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
SMBJ18CA
Dc Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
1N4148
Capar Components
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
LM555CN
Texas Instruments
LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
SS14
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002-7-F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LAN8720A-CP-TR
Microchip Technology
LAN8720A-CP-TR by Microchip: Ethernet transceiver with 100 Mbps data rate, operates at 3.3V, and consumes 54mA max supply current. Ideal for network interfaces in commercial applications due to its small size (4x4mm) and low power consumption.
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
BAV99-7-F
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Leshan Radio
RECTIFIER DIODE; Surface Mount: YES; Maximum Non Repetitive Peak Forward Current: 2 A; Maximum Reverse Recovery Time: .004 us; No. of Phases: 1; Maximum Operating Temperature: 175 Cel;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
BAV99
Changzhou Galaxy Century Microelectronics
BF824,215
NXP Semiconductors
The NXP Semiconductors BF824,215 is a PNP RF BJT with 3 terminals and max power dissipation of 0.3W. It operates at up to 150°C, has a max collector-emitter voltage of 30V, and fT of 450MHz. Ideal for high-frequency applications in small outline packages requiring low power consumption.
MCH4015
Onsemi
The Onsemi MCH4015 is an NPN RF BJT transistor with a max power dissipation of 0.45W and fT of 10GHz. It is used in X Band applications due to its small outline package, flat terminals, and dual terminal position.
MMBTH24LT3
MMBTH24LT3 by Onsemi is a NPN RF BJT with 30V VCEO, 0.05A IC, and 620MHz fT. Ideal for high-frequency applications in small outline packages due to its very high frequency band capabilities. Suitable for surface mount designs requiring low collector-base capacitance.
2N3137
2N3137 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 2W, operates up to 175 °C, and has a nominal transition frequency of 750 MHz. Ideal for very high-frequency circuits, it ensures reliable performance.
1075MP
Ghz Technology
NPN; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 6.5 A; Minimum DC Current Gain (hFE): 20; No. of Elements: 1; Transistor Element Material: SILICON;
BFR520,215
NXP Semiconductors' BFR520,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle a max collector current of 0.07A at an operating temp of 175°C.
BFS17
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2100 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;
MSC80186
MSC80186 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and boasts a nominal transition frequency of 3200 MHz. Its ceramic, metal-sealed package ensures reliability in L-band operations.
BF224RLRA
BF224RLRA by Onsemi is a NPN BJT with max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating at 150 °C, it has fT of 850MHz, suitable for RF applications in very high frequency band due to its cylindrical package style.
BFT92
Philips Components
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
BFU520XRR
The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.
2N3866A
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; JEDEC-95 Code: TO-205AD;
SS9018E
SS9018E by Onsemi is a NPN BJT transistor for RF applications. With max VCEsat of 0.5V, it operates at 1100MHz fT and handles up to 0.05A IC. Ideal for amplifier circuits in L Band frequencies with a max temp of 150 °C.
TIS126
TIS126 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 40V and a transition frequency of 600MHz. It is commonly used as an amplifier in the very high-frequency band applications due to its 0.4W power dissipation capability and SILICON element material.
NE662M04-T2-A
Nec Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .035 A; Transistor Element Material: SILICON;
BFU725F/N1,115
BFU725F/N1,115 by NXP Semiconductors is an NPN RF Small Signal BJT with a max power dissipation of 0.136W and min DC current gain of 160. It features silicon germanium material and can handle a max collector current of 0.04A. Ideal for applications requiring high-frequency signal amplification in compact electronic devices.
BFG425WT/R
NXP Semiconductors' BFG425WT/R is a NPN RF BJT transistor with 4 terminals, ideal for L Band applications. It has a max power dissipation of 0.135W, fT of 25GHz, and hFE of 50. Suitable for switching purposes with a max collector current of 0.03A and max collector-emitter voltage of 4.5V.
2N4997
2N4997 by Texas Instruments is a NPN BJT transistor with max. collector-emitter voltage of 18V and max. power dissipation of 0.25W. Ideal for amplifier applications, it operates in the very high frequency band up to 600MHz, with a min DC current gain of 30 (hFE).
934047460135
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 22000 MHz; Maximum Collector Current (IC): .012 A; Terminal Position: DUAL;
BFY740B01ESB4SA1
Infineon Technologies
RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MPS5179
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
MPS5179G
MPS5179RL
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 3;
MPS5179RL1
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: O-PBCY-T3;
MPS5179RLRA
MPS5179RLRAG
MPS5179RLRM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;
MPS5179RLRP
MPS5179RLRPG
MPS5179ZL1
Diodes Incorporated
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Base Capacitance: 1 pF;
MPS5179SM
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Package Style (Meter): SMALL OUTLINE; Terminal Position: SINGLE;
MPS5179SMTA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; JESD-30 Code: R-PSSO-G3; Qualification: Not Qualified;
MPS5179SMTC
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-30 Code: R-PSSO-G3;
MPS5179STOA
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; No. of Terminals: 3; No. of Elements: 1;
MPS5179STOB
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Transistor Application: AMPLIFIER; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MPS5179STZ
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; No. of Elements: 1; Qualification: Not Qualified;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; JEDEC-95 Code: TO-92;
MPS5179RLRE
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 12 V;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Package Shape: ROUND;
Supply Digital Components
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