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MPS5179RLRPG

Onsemi

MPS5179RLRPG by Onsemi

MPS5179RLRPG by Onsemi is an NPN RF BJT transistor with a max fT of 900 MHz. It has a max IC of 0.05 A and Ptot of 0.2 W, making it suitable for amplifier applications in the VHF band. The package is cylindrical with through-hole terminals and can operate up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 3,747 parts In-Stock

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Digiode

USA . 1,745 parts In-Stock

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AZTECH Wire

Italy . 292 parts In-Stock

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$12.740

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QUARKTWIN TECHNOLOGY LTD

USA . 16,065 parts In-Stock

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TANS Electronics

Latvia . 8,249 parts In-Stock

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Kulean Microsystems

USA . 7,243 parts In-Stock

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Problanco Electronics

Mexico . 4,644 parts In-Stock

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SupplyDigital Components

Austria . 3,208 parts In-Stock

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Corphita

USA . 2,134 parts In-Stock

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UHIMA Technologies

Türkiye . 233 parts In-Stock

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Corohmni

South Africa . 117 parts In-Stock

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Overview

Upgrade your electronics with the MPS5179RLRPG by Onsemi, a top-quality RF Small Signal Bipolar Junction Transistor that delivers exceptional performance in amplifier applications. Made with precision and expertise by Onsemi, this NPN transistor offers reliability and efficiency, operating in very high-frequency bands with a maximum collector-emitter voltage of 12V. With a minimum DC current gain of 25 and a nominal transition frequency of 900MHz, this transistor provides unmatched value and benefits to customers looking for high-performance components for their electronic projects. Trust Onsemi for superior quality and cutting-edge technology in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This lightweight and durable material makes the transistor suitable for a wide range of applications while ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes the transistor easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Suitable for applications requiring very high frequency operation, providing high performance in advanced electronic systems.

Maximum Power Dissipation (Abs): 0.2 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliability in demanding environments.

Maximum Collector-Emitter Voltage: 12 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltage levels, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 900 MHz

With a high nominal transition frequency, this transistor is capable of high-frequency operation, making it suitable for fast-switching applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MPS5179RLRPG attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

12 V

Configuration:

Minimum DC Current Gain (hFE):

25

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS5179RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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